- 18 1月, 2007 2 次提交
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由 Adrian Hunter 提交于
If OneNAND is operating within specification, all operations should easily be completed within the 20 millisecond timeout. This patch faithlessly adds a check for the timeout and returns an error in that case. Signed-off-by: NAdrian Hunter <ext-adrian.hunter@nokia.com> Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
We have to set ONENAND_REG_START_BLOCK_ADDRESS to avoid status error Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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- 10 1月, 2007 7 次提交
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由 Adrian Hunter 提交于
The read-while-load method of reading from OneNAND needs to allow for the change of bufferRAM address at the boundary between the two chips in a double density (DDP) device. Signed-off-by: NAdrian Hunter <ext-adrian.hunter@nokia.com> Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
we don't need to return ecc error when 1-bit ecc. We only return error code when 2-bit ecc error Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Adrian Hunter 提交于
Read-while-load enables higher performance read operations. Signed-off-by: NAdrian Hunter <ext-adrian.hunter@nokia.com> Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
Even though there is ECC error. OneNAND driver updates the buffram as valid Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Artem Bityutskiy 提交于
This patch teaches OneNAND to release processor in read/write/erase cycles and let other processes proceed. Also, remove buggi touch watchdog call which only hides the problem instead of solving it. Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
OneNAND supports up to 4 writes at one NAND page. Add support of this feature. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
Fix onenand_wait error reporting Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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- 11 12月, 2006 1 次提交
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由 Kyungmin Park 提交于
There are missing place in recent MTD oob patch http://git.infradead.org/?p=mtd-2.6.git;a=commitdiff;h=7014568bad55c20b7ee4f439d78c9e875912d51fSigned-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 30 11月, 2006 1 次提交
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由 David Woodhouse 提交于
The newly-added cafe_ecc.c had a lot of it because of the way the lookup table was auto-generated; clean up the other files too while we're at it. Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 16 11月, 2006 3 次提交
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由 Kyungmin Park 提交于
Idea from Jarkko Lavinen Signed-off-by: NJarkko Lavinen <jarkko.lavinen@nokia.com> Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
Now you can use mtd lock inferface on OneNAND The idea is from Nemakal, Vijaya, thanks Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
We can use the two methods to wait. 1. polling: read interrupt status register 2. interrupt: use kernel ineterrupt mechanism To use interrupt method, you first connect onenand interrupt pin to your platform and configure interrupt properly Signed-off-by: Kyungmin Park <kyungmin.park at samsung.com>
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- 26 9月, 2006 2 次提交
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由 Kyungmin Park 提交于
OneNAND lock scheme depends on density and process of chip. Some OneNAND chips support all block unlock Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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由 Kyungmin Park 提交于
- fix OneNAND probe whether OneNAND Sync. Burst read mode or not - fix OneNAND reset wait problem Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 29 5月, 2006 3 次提交
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由 Thomas Gleixner 提交于
Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Thomas Gleixner 提交于
The nand_oobinfo structure is not fitting the newer error correction demands anymore. Replace it by struct nand_ecclayout and fixup the users all over the place. Keep the nand_oobinfo based ioctl for user space compability reasons. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Thomas Gleixner 提交于
The info structure for out of band data was copied into the mtd structure. Make it a pointer and remove the ability to set it from userspace. The position of ecc bytes is defined by the hardware and should not be changed by software. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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- 23 5月, 2006 5 次提交
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由 Thomas Gleixner 提交于
MTD clients are agnostic of FLASH which needs ECC suppport. Remove the functions and fixup the callers. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Thomas Gleixner 提交于
These functions were never implemented and added only bloat to partition and concat code. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Thomas Gleixner 提交于
NAND writev(_ecc) support is not longer necessary. Remove it. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Joern Engel 提交于
o Add a flag MTD_BIT_WRITEABLE for devices that allow single bits to be cleared. o Replace MTD_PROGRAM_REGIONS with a cleared MTD_BIT_WRITEABLE flag for STMicro and Intel Sibley flashes with internal ECC. Those flashes disallow clearing of single bits, unlike regular NOR flashes, so the new flag models their behaviour better. o Remove MTD_ECC. After the STMicro/Sibley merge, this flag is only set and never checked. Signed-off-by: NJoern Engel <joern@wh.fh-wedel.de>
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由 Joern Engel 提交于
At least two flashes exists that have the concept of a minimum write unit, similar to NAND pages, but no other NAND characteristics. Therefore, rename the minimum write unit to "writesize" for all flashes, including NAND. Signed-off-by: NJoern Engel <joern@wh.fh-wedel.de>
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- 12 5月, 2006 8 次提交
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由 Kyungmin Park 提交于
We need to check block cmd only instead with comparing with cmd Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
One Block of the NAND Flash Array memory is reserved as a One-Time Programmable Block memory area. Also, 1st Block of NAND Flash Array can be used as OTP. The OTP block can be read, programmed and locked using the same operations as any other NAND Flash Array memory block. OTP block cannot be erased. OTP block is fully-guaranteed to be a valid block. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
There's erase bug in DDP. We need to add DDP select in erase Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
There's some problem with write oob in serveral platform. So we write oob with oobsize aligned (16bytes) instead of 3 bytes (from {2, 3}) Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
Signed-off-by: NJarkko Lavinen <jarkko.lavinen@nokia.com>
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由 Jarkko Lavinen 提交于
Some free byte positions at onenand_oob_64 were wrong. This was also reported by Christian Lehne. 3 byte slots are at 2+16*i and 2 byte slots at 14+16*i. Signed-off-by: NJarkko Lavinen <jarkko.lavinen@nokia.com>
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由 Kyungmin Park 提交于
Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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- 19 12月, 2005 3 次提交
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由 Kyungmin Park 提交于
Signed-off-by: NLinus Torvalds <torvalds@osdl.org>
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由 Kyungmin Park 提交于
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由 Kyungmin Park 提交于
This (and the three subsequent patches) is working well on OMAP H4 with 2.6.15-rc4 kernel and passes the LTP fs test. Signed-off-by: NLinus Torvalds <torvalds@osdl.org>
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- 09 11月, 2005 1 次提交
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由 Andrew Morton 提交于
drivers/mtd/onenand/onenand_base.c: In function `onenand_wait': drivers/mtd/onenand/onenand_base.c:293: error: `jiffies' undeclared (first use in this function) drivers/mtd/onenand/onenand_base.c:293: error: (Each undeclared identifier is reported only once drivers/mtd/onenand/onenand_base.c:293: error: for each function it appears in.) drivers/mtd/onenand/onenand_base.c:293: error: implicit declaration of function `msecs_to_jiffies' drivers/mtd/onenand/onenand_base.c:294: error: implicit declaration of function `time_before' drivers/mtd/onenand/onenand_base.c:301: error: implicit declaration of function `cond_resched' drivers/mtd/onenand/onenand_base.c: In function `onenand_get_device': drivers/mtd/onenand/onenand_base.c:522: error: implicit declaration of function `set_current_state' drivers/mtd/onenand/onenand_base.c:522: error: `TASK_UNINTERRUPTIBLE' undeclared (first use in this function) drivers/mtd/onenand/onenand_base.c:525: error: implicit declaration of function `schedule' drivers/mtd/onenand/onenand_base.c: In function `onenand_release_device': drivers/mtd/onenand/onenand_base.c:545: error: `TASK_UNINTERRUPTIBLE' undeclared (first use in this function) drivers/mtd/onenand/onenand_base.c:545: error: `TASK_INTERRUPTIBLE' undeclared (first use in this function) Cc: Thomas Gleixner <tglx@linutronix.de> Cc: David Woodhouse <dwmw2@infradead.org> Signed-off-by: NAndrew Morton <akpm@osdl.org> Signed-off-by: NLinus Torvalds <torvalds@osdl.org>
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- 07 11月, 2005 4 次提交
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由 Thomas Gleixner 提交于
Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
Add density mask for better support of DDP chips. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
Add suspend/resume Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
- Remove unused block, page parameters - Add constant instead of runtime value Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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