read_page_raw and write_page_raw method description is not clear enough.
It clearly specifies that ECC correction should not be involved but does
not talk about specific layout (by layout I mean where in-band and
out-of-band data are stored on the NAND media) used by NAND/ECC
controllers.

Those specific layouts might impact MTD users and thus should be hidden (as
already done in the standard NAND_ECC_HW_SYNDROME implementation).

Clearly state this constraint in the nand_ecc_ctrl struct documentation.
Signed-off-by: NBoris Brezillon <boris.brezillon@free-electrons.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add an onfi_timing_mode_default field to nand_chip and nand_flash_dev in
order to support NAND timings definition for non-ONFI NAND.

NAND that support better timings mode than the default one have to define
a new entry in the nand_ids table.

The default timing mode should be deduced from timings description from
the datasheet and the ONFI specification
(www.onfi.org/~/media/ONFI/specs/onfi_3_1_spec.pdf, chapter 4.15
"Timing Parameters").
You should choose the closest mode that fit the timings requirements of
your NAND chip.
Signed-off-by: NBoris BREZILLON <boris.brezillon@free-electrons.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Change the comment type (from /** to /*) to prevent DocBook from
complaining about missing description for nand_sdr_timings fields.

There is currently no need in documenting those fields because they are
fully described in the ONFI specification (which is pointed out in the
comment).
Signed-off-by: NBoris BREZILLON <boris.brezillon@free-electrons.com>
Reported-by: NRandy Dunlap <rdunlap@infradead.org>
Acked-by: NRandy Dunlap <rdunlap@infradead.org>
Tested-by: NRandy Dunlap <rdunlap@infradead.org>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Fix kernel-doc warning in <linux/mtd/nand.h>:

Warning(..//include/linux/mtd/nand.h:795): No description found for parameter 'ecc'
Signed-off-by: NRandy Dunlap <rdunlap@infradead.org>
Cc:	David Woodhouse <dwmw2@infradead.org>
Cc:	Brian Norris <computersforpeace@gmail.com>
Cc:	linux-mtd@lists.infradead.org
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add a converter to retrieve NAND timings from an ONFI NAND timing mode.
At the moment, only SDR NAND timings are supported.
Signed-off-by: NBoris BREZILLON <boris.brezillon@free-electrons.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Define a struct containing the standard NAND timings as described in NAND
datasheets.
Signed-off-by: NBoris BREZILLON <boris.brezillon@free-electrons.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

In addition to mtd_block_isbad(), which checks if a block is bad or
reserved, it's needed to check if a block is reserved only (but not
bad). This commit adds an MTD interface for it, in a similar fashion to
mtd_block_isbad().

While here, fix mtd_block_isbad() so the out-of-bounds checking is done
before the callback check.
Signed-off-by: NEzequiel Garcia <ezequiel.garcia@free-electrons.com>
Tested-by: NPekon Gupta <pekon@ti.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

nand_base can be passed a kmap()'d buffers from highmem by
filesystems like jffs2. This results in failure to map the
physical address of the DMA buffer on various contoller
driver on different platforms. This change adds a chip option
to use preallocated databuf as bounce buffers used in
nand_do_read_ops() and nand_do_write_ops().
This allows for specific nand controller driver to set this
option as needed.
Signed-off-by: NKamal Dasu <kdasu.kdev@gmail.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

The nand_chip::erase_cmd callback previously served a dual purpose; for
one, it allowed a per-flash-chip override, so that AG-AND devices could
use a different erase command than other NAND. These AND devices were
dropped in commit 14c65786 (mtd: nand:
remove AG-AND support). On the other hand, some drivers (denali and
doc-g4) need to use this sort of callback to implement
controller-specific erase operations.

To make the latter operation easier for some drivers (e.g., ST's new BCH
NAND driver), it helps if the command dispatch and wait functions can be
lumped together, rather than called separately.

This patch does two things:
 1. Pull the call to chip->waitfunc() into chip->erase_cmd(), and return
    the status from this callback
 2. Rename erase_cmd() to just erase(), since this callback does a
    little more than just send a command
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Tested-by: NLee Jones <lee.jones@linaro.org>

GET_FEATURES and SET_FEATURES also need byte-addressing on 16-bit devices.
Signed-off-by: NDavid Mosberger <davidm@egauge.net>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add the "page" argument for the read_subpage hook. With this argument,
the implementation of this hook could prints out more accurate information
for debugging.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

This patch adds the parsing code for the JEDEC compliant NAND.

Since we need the 0x40 as the column address, this patch also
makes the NAND_CMD_PARAM to use the 8-bit address only.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add a helper to get the supported features for JEDEC compliant NAND.
Also add a macro JEDEC_FEATURE_16_BIT_BUS.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add the jedec_version field, and add an anonymous union which
contains the nand_onfi_params and nand_jedec_params.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Create the nand_jedec_params{} and jedec_ecc_info{} according to
the JESD230A (Revision of JESD230, October 2012).
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

The NAND command helpers tend to automatically shift the column address
for x16 bus devices, since most commands expect a word address, not a
byte address. The Read ID command, however, expects an 8-bit address
(i.e., 0x00, 0x20, or 0x40 should not be translated to 0x00, 0x10, or
0x20).

This fixes the column address for a few drivers which imitate the
nand_base defaults. Note that I don't touch sh_flctl.c, since it already
handles this problem slightly differently (note its comment "READID is
always performed using an 8-bit bus").

I have not tested this patch, as I only have x8 parts up for testing at
this point. Hopefully that can change soon...
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Tested-by: NEzequiel Garcia <ezequiel.garcia@free-electrons.com>
Tested-By: NPekon Gupta <pekon@ti.com>

There is no reference to these two macros now.
Just remove them.
Signed-off-by: NHuang Shijie <shijie8@gmail.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

The patch converts the arrays to buffer pointers for nand_buffers{}.

The cafe_nand.c is the only NAND_OWN_BUFFERS user which allocates
nand_buffers{} itself.

This patch disables the DMA for nand_scan_ident, and restores the DMA
status after we finish the nand_scan_ident. This way, we can get page
size and OOB size and use them to allocate cafe->dmabuf.

Since the cafe_nand.c uses the NAND_ECC_HW_SYNDROME ECC mode, we do not
allocate the buffers for @ecccalc and @ecccode.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add the Intel manufacturer Id.
Tested with Intel JS29F32G08ACMD1(4096 + 224) which is ONFI 2.0 compliant
nand.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add the manufactor ID for SanDisk.
Make preparation for SanDisk SDTNRGAMA-008G.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

According to the Open NAND Flash Interface Specification (ONFI) Revision
3.1 "Parameters are always transferred on the lower 8-bits of the data
bus." for the Get Features and Set Features commands.

So using read_buf and write_buf is wrong for 16-bit wide nand chips as
they use I/O[15:0]. The Get Features command is easily fixed using 4
times the read_byte callback. For Set Features implement a new
overwritable callback "write_byte". Still I expect the default to work
just fine for all controllers and making it overwriteable was just done
for symmetry.
Signed-off-by: NUwe Kleine-König <u.kleine-koenig@pengutronix.de>
[Brian: fixed warning]
Tested-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

To be consistent with the rest of include/linux/mtd/nand.h, we should
use the __packed shorthand instead of __attribute__((packed)).
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Acked-by: NHuang Shijie <b32955@freescale.com>

Micron provides READ RETRY support via the ONFI vendor-specific
parameter block (to indicate how many read-retry modes are available)
and the ONFI {GET,SET}_FEATURES commands with a vendor-specific feature
address (to support reading/switching the current read-retry mode).

The recommended sequence is as follows:

  1. Perform PAGE_READ operation
  2. If no ECC error, we are done
  3. Run SET_FEATURES with feature address 89h, mode 1
  4. Retry PAGE_READ operation
  5. If ECC error and there are remaining supported modes, increment the
     mode and return to step 3. Otherwise, this is a true ECC error.
  6. Run SET_FEATURES with feature address 89h, mode 0, to return to the
     default state.

This patch implements the chip->setup_read_retry() callback for
Micron and fills in the chip->read_retries.

Tested on Micron MT29F32G08CBADA, which supports 8 read-retry modes.

The Micron vendor-specific table was checked against the datasheets for
the following Micron NAND:

Needs retry   Cell-type    Part number          Vendor revision    Byte 180
-----------   ---------    ----------------     ---------------    ------------
No            SLC          MT29F16G08ABABA      1                  Reserved (0)
No            MLC          MT29F32G08CBABA      1                  Reserved (0)
No            SLC          MT29F1G08AACWP       1                  0
Yes           MLC          MT29F32G08CBADA      1                  08h
Yes           MLC          MT29F64G08CBABA      2                  08h
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Acked-by: NHuang Shijie <b32955@freescale.com>

Modern MLC (and even SLC?) NAND can experience a large number of
bitflips (beyond the recommended correctability capacity) due to drifts
in the voltage threshold (Vt). These bitflips can cause ECC errors to
occur well within the expected lifetime of the flash. To account for
this, some manufacturers provide a mechanism for shifting the Vt
threshold after a corrupted read.

The generic pattern seems to be that a particular flash has N read retry
modes (where N = 0, traditionally), and after an ECC failure, the host
should reconfigure the flash to use the next available mode, then retry
the read operation. This process repeats until all bitfips can be
corrected or until the host has tried all available retry modes.

This patch adds the infrastructure support for a
vendor-specific/flash-specific callback, used for setting the read-retry
mode (i.e., voltage threshold).

For now, this patch always returns the flash to mode 0 (the default
mode) after a successful read-retry, according to the flowchart found in
Micron's datasheets. This may need to change in the future if it is
determined that eventually, mode 0 is insufficient for the majority of
the flash cells (and so for performance reasons, we should leave the
flash in mode 1, 2, etc.).
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Acked-by: NHuang Shijie <b32955@freescale.com>

Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Acked-by: NHuang Shijie <b32955@freescale.com>

s/strenght/strength/

This field isn't used anywhere, so this rename is safe.
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

The @cellinfo fields contains unused information, such as write caching,
internal chip numbering, etc. But we only use it to check the SLC or MLC.

This patch tries to make it more clear and simple, renames the @cellinfo
to @bits_per_cell.

In order to avoiding the bisect issue, this patch also does the following
changes:
  (0) add a macro NAND_CI_CELLTYPE_SHIFT to avoid the hardcode.

  (1) add a helper to parse out the cell type : nand_get_bits_per_cell()

  (2) parse out the cell type for extended-ID chips and the full-id nand chips.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add a helper to check if a nand chip is SLC or MLC.
This helper makes the code more readable.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

This field is never used, except to print it out.
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>

Add an instance of an anonymous struct to store the ECC info for full id
nand chips.
	@ecc.strength_ds: ECC correctability from the datasheet.
	@ecc.step_ds: ECC size required by the @ecc.strength_ds,

These two fields are all from the datasheet.

Also add the necessary macros to make the code simple and clean.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

add a helper to get the supported features for ONFI nand.
Also add the neccessary macros.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Reviewed-and-tested-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

Since the ONFI 2.1, the onfi spec adds the Extended Parameter Page
to store the ECC info.

The onfi spec tells us that if the nand chip's recommended ECC codeword
size is not 512 bytes, then the @ecc_bits is 0xff. The host _SHOULD_ then
read the Extended ECC information that is part of the extended parameter
page to retrieve the ECC requirements for this device.

This patch adds
    [1] the neccessary fields for nand_onfi_params{},
    [2] and adds the onfi_ext_ecc_info{} for Extended ECC information,
    [3] adds onfi_ext_section{} for extended sections,
    [4] and adds onfi_ext_param_page{} for the Extended Parameter Page.
Acked-by: NPekon Gupta <pekon@ti.com>
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Reviewed-and-tested-by: NBrian Norris <computersforpeace@gmail.com>
[Brian: amended for checkpatch.pl]
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

1.) Why add the ECC information to the nand_chip{} ?
   Each nand chip has its requirement for the ECC correctability, such as
   "4bit ECC for each 512Byte" or "40bit ECC for each 1024Byte".
   This ECC info is very important to the nand controller, such as gpmi.

   Take the Micron MT29F64G08CBABA for example, its geometry is
   8KiB page size, 744 bytes oob size and it requires 40bit ECC per 1KiB.
   If we do not provide the ECC info to the gpmi nand driver, it has to
   calculate the ECC correctability itself. The gpmi driver will gets the 56bit
   ECC for per 1KiB which is beyond its BCH's 40bit ecc capibility.
   The gpmi will quits in this case. But in actually, the gpmi can supports
   this nand chip if it can get the right ECC info.

2.) about the new fields.
   The @ecc_strength_ds stands for the ecc bits needed within the @ecc_step_ds.
   The two fields should be set from the nand chip's datasheets.

   For example:
	"4bit ECC for each 512Byte" could be:
		@ecc_strength_ds = 4, @ecc_step_ds = 512.
	"40bit ECC for each 1024Byte" could be:
		@ecc_strength_ds = 40, @ecc_step_ds = 1024.

3.) Why do not re-use the @strength and @size in the nand_ecc_ctrl{}?
   The @strength and @size in nand_ecc_ctrl{} is used by the nand controller
   driver, while the @ecc_strength_ds and @ecc_step_ds are get from the datasheet.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Reviewed-and-tested-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

nand_base.c shouldn't have to know the implementation details of
nand_bbt's in-memory BBT. Specifically, nand_base shouldn't perform the
bit masking and shifting to isolate a BBT entry.

Instead, just move some of the BBT code into a new nand_markbad_bbt()
interface. This interface allows external users (i.e., nand_base) to
mark a single block as bad in the BBT. Then nand_bbt will take care of
modifying the in-memory BBT and updating the flash-based BBT (if
applicable).
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

Spansion's S34MLx chips support ONFI but not the GET/SET FEATURES calls.
Signed-off-by: NDavid Mosberger <dmosberger@gmail.com>
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

The oob size of Micron's MT29F64G08CBABAWP is 744 bytes.
So increase the NAND_MAX_OOBSIZE to 744.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

This remedies a few problems:

(1) The use of "the" vs. "a" is a little confusing, IMO.

(2) nand_chip.block_bad is used exclusively for checking the OOB bad
    block markers of a NAND. Any BBT functionality is handled in
    nand_bbt.c, so this description should differentiate itself from
    nand_bbt.c.
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

This patch adds support for subpage (partial-page) writes when using
hardware based ECC schemes.
Advantages:
(1) reduces storage overhead when using file-systems like UBIFS, which
store LEB header at page-size granularity.
(2) allows independent subpage writes, thereby increasing NAND storage
efficiency for non-page aligned data.
+ updated cafe_nand and lpc32xx_mlc NAND drivers for change in
chip->write_page interface.
Signed-off-by: NGupta, Pekon <pekon@ti.com>
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

Notice that all the flashes belonging to the "legacy ID" class have 512 bytes
NAND page. This means we may simplify the 'LEGACY_ID_NAND()' macro as well as
the NAND ID table a little.
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

As time goes on, we begin to meet the situation that we can not get enough
information from some nand chips's id data. Take some Toshiba's nand chips
for example. I have 4 Toshiba's nand chips in my hand:
	TC58NVG2S0F, TC58NVG3S0F, TC58NVG5D2, TC58NVG6D2

When we read these chips' datasheets, we will get the geometry of these chips:
	TC58NVG2S0F : 4096 + 224
	TC58NVG3S0F : 4096 + 232
	TC58NVG5D2  : 8192 + 640
	TC58NVG6D2  : 8192 + 640

But we can not parse out the correct oob size for these chips from the id data.

This patch adds some new fields to the nand_flash_dev{}:
  @id_len: the valid length of the id data. See the comments in
           nand_id_has_period()
  @oobsize: the oob size.
Signed-off-by: NHuang Shijie <b32955@freescale.com>
Reviewed-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>