1. 31 8月, 2013 7 次提交
  2. 30 8月, 2013 2 次提交
  3. 06 8月, 2013 4 次提交
  4. 05 4月, 2013 9 次提交
  5. 14 3月, 2013 1 次提交
  6. 04 2月, 2013 1 次提交
  7. 19 1月, 2013 1 次提交
  8. 13 12月, 2012 1 次提交
  9. 03 12月, 2012 6 次提交
  10. 18 11月, 2012 2 次提交
  11. 16 11月, 2012 1 次提交
    • M
      mtd: nand_wait: warn if the nand is busy on exit · f251b8df
      Matthieu CASTET 提交于
      This patch allow to detect buggy driver/hardware with
      bad RnB (dev_ready) management or when timeout occurs in polling mode.
      
      This works when dev_ready is set or not set.
      There are 2 methods to wait for an erase/program command completion:
      
      1. Wait until nand RnB pin goes high (that's what chip->dev_ready usually does)
      2. Poll the device: send a status (0x70) command and read status byte in a loop
         until bit NAND_STATUS_READY is set
      
      In all cases, you should send a status command after completion, to check if
      the operation was successful. And if the operation completed, the status should
      have bit NAND_STATUS_READY set.
      Signed-off-by: NMatthieu CASTET <matthieu.castet@parrot.com>
      Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
      f251b8df
  12. 15 11月, 2012 3 次提交
  13. 10 10月, 2012 1 次提交
    • B
      mtd: nand: fix Samsung SLC NAND identification regression · bc86cf7a
      Brian Norris 提交于
      A combination of the following two commits caused a regression in 3.7-rc1
      when identifying some Samsung NAND, so that some previously working NAND
      were no longer detected properly:
      
          commit e3b88bd6
          mtd: nand: add generic READ ID length calculation functions
      
          commit e2d3a35e
          mtd: nand: detect Samsung K9GBG08U0A, K9GAG08U0F ID
      
      Particularly, a regression was seen on Samsung K9F2G08U0B, with the
      following full 8-byte READ ID string:
      
          ec da 10 95 44 00 ec da
      
      The basic problem is that Samsung manufactures both SLC and MLC NAND
      that use a non-standard decoding table for deriving information from
      their IDs. I have heuristically determined that all the chips that use
      the new table have ID strings which wrap around after the 6th byte.
      Unfortunately, I overlooked the fact that some older Samsung SLC (which
      use a different decoding table) have "5 byte ID strings" which also wrap
      around after the 6th byte.
      
      This patch re-introduces a distinction between these old and new Samsung
      NAND by checking that the 6th byte is non-zero, allowing both old and
      new Samsung NAND to be detected properly.
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      Tested-by: NBrian Norris <computersforpeace@gmail.com>
      Reported-by: NMarek Vasut <marex@denx.de>
      Tested-by: NMarek Vasut <marex@denx.de>
      Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
      bc86cf7a
  14. 29 9月, 2012 1 次提交
    • B
      mtd: nand: detect Samsung K9GBG08U0A, K9GAG08U0F ID · e2d3a35e
      Brian Norris 提交于
      Datasheets for the following Samsung NAND parts (both MLC and SLC) describe
      extensions to the Samsung 6-byte extended ID decoding table:
      
      K9GBG08U0A (MLC, 6-byte ID)
      K9GAG08U0F (MLC, 6-byte ID)
      K9FAG08U0M (SLC, 6-byte ID)
      
      The table found in K9GAG08U0F, p.44, contains a superset of the information
      found in other previous datasheets.
      
      This patch adds support for all of these chips, with 512B and 640B OOB sizes.
      It also changes the detection pattern such that this table applies to all
      Samsung 6-byte ID NAND, not just MLC. This is safe, according to the NAND
      parameter data I have collected:
      
      Note that nand_base.c does not yet support the bad block marker scheme defined
      for these chips (i.e., scan 1st and last page for BB markers).
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
      Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
      e2d3a35e