提交 1696e6bc 编写于 作者: B Brian Norris 提交者: David Woodhouse

mtd: nand: kill NAND_NO_READRDY

According to its documentation, the NAND_NO_READRDY option is always used
when autoincrement is not supported. Autoincrement support was recently
dropped, so we can drop this options as well (defaulting to "no read ready
check").
Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
上级 63d99c0e
......@@ -805,7 +805,6 @@ static int fsl_elbc_chip_init(struct fsl_elbc_mtd *priv)
chip->bbt_md = &bbt_mirror_descr;
/* set up nand options */
chip->options = NAND_NO_READRDY;
chip->bbt_options = NAND_BBT_USE_FLASH;
chip->controller = &elbc_fcm_ctrl->controller;
......
......@@ -805,7 +805,6 @@ static int fsl_ifc_chip_init(struct fsl_ifc_mtd *priv)
out_be32(&ifc->ifc_nand.ncfgr, 0x0);
/* set up nand options */
chip->options = NAND_NO_READRDY;
chip->bbt_options = NAND_BBT_USE_FLASH;
......
......@@ -1565,14 +1565,6 @@ static int nand_do_read_ops(struct mtd_info *mtd, loff_t from,
oobreadlen -= toread;
}
}
if (!(chip->options & NAND_NO_READRDY)) {
/* Apply delay or wait for ready/busy pin */
if (!chip->dev_ready)
udelay(chip->chip_delay);
else
nand_wait_ready(mtd);
}
} else {
memcpy(buf, chip->buffers->databuf + col, bytes);
buf += bytes;
......@@ -1837,14 +1829,6 @@ static int nand_do_read_oob(struct mtd_info *mtd, loff_t from,
len = min(len, readlen);
buf = nand_transfer_oob(chip, buf, ops, len);
if (!(chip->options & NAND_NO_READRDY)) {
/* Apply delay or wait for ready/busy pin */
if (!chip->dev_ready)
udelay(chip->chip_delay);
else
nand_wait_ready(mtd);
}
readlen -= len;
if (!readlen)
break;
......@@ -2915,7 +2899,6 @@ static int nand_flash_detect_onfi(struct mtd_info *mtd, struct nand_chip *chip,
*busw = NAND_BUSWIDTH_16;
chip->options &= ~NAND_CHIPOPTIONS_MSK;
chip->options |= NAND_NO_READRDY & NAND_CHIPOPTIONS_MSK;
pr_info("ONFI flash detected\n");
return 1;
......
......@@ -70,7 +70,7 @@ struct nand_flash_dev nand_flash_ids[] = {
* These are the new chips with large page size. The pagesize and the
* erasesize is determined from the extended id bytes
*/
#define LP_OPTIONS (NAND_SAMSUNG_LP_OPTIONS | NAND_NO_READRDY)
#define LP_OPTIONS NAND_SAMSUNG_LP_OPTIONS
#define LP_OPTIONS16 (LP_OPTIONS | NAND_BUSWIDTH_16)
/* 512 Megabit */
......@@ -157,7 +157,7 @@ struct nand_flash_dev nand_flash_ids[] = {
* writes possible, but not implemented now
*/
{"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000,
NAND_IS_AND | NAND_NO_READRDY | NAND_4PAGE_ARRAY | BBT_AUTO_REFRESH},
NAND_IS_AND | NAND_4PAGE_ARRAY | BBT_AUTO_REFRESH},
{NULL,}
};
......
......@@ -1005,7 +1005,6 @@ static int pxa3xx_nand_scan(struct mtd_info *mtd)
chip->ecc.size = host->page_size;
chip->ecc.strength = 1;
chip->options |= NAND_NO_READRDY;
if (host->reg_ndcr & NDCR_DWIDTH_M)
chip->options |= NAND_BUSWIDTH_16;
......
......@@ -185,12 +185,6 @@ typedef enum {
* This happens with the Renesas AG-AND chips, possibly others.
*/
#define BBT_AUTO_REFRESH 0x00000080
/*
* Chip does not require ready check on read. True
* for all large page devices, as they do not support
* autoincrement.
*/
#define NAND_NO_READRDY 0x00000100
/* Chip does not allow subpage writes */
#define NAND_NO_SUBPAGE_WRITE 0x00000200
......
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