- 11 3月, 2014 2 次提交
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由 Huang Shijie 提交于
There is no reference to these two macros now. Just remove them. Signed-off-by: NHuang Shijie <shijie8@gmail.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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由 Huang Shijie 提交于
The patch converts the arrays to buffer pointers for nand_buffers{}. The cafe_nand.c is the only NAND_OWN_BUFFERS user which allocates nand_buffers{} itself. This patch disables the DMA for nand_scan_ident, and restores the DMA status after we finish the nand_scan_ident. This way, we can get page size and OOB size and use them to allocate cafe->dmabuf. Since the cafe_nand.c uses the NAND_ECC_HW_SYNDROME ECC mode, we do not allocate the buffers for @ecccalc and @ecccode. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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- 21 1月, 2014 2 次提交
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由 Huang Shijie 提交于
Add the Intel manufacturer Id. Tested with Intel JS29F32G08ACMD1(4096 + 224) which is ONFI 2.0 compliant nand. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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由 Huang Shijie 提交于
Add the manufactor ID for SanDisk. Make preparation for SanDisk SDTNRGAMA-008G. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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- 15 1月, 2014 1 次提交
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由 Uwe Kleine-König 提交于
According to the Open NAND Flash Interface Specification (ONFI) Revision 3.1 "Parameters are always transferred on the lower 8-bits of the data bus." for the Get Features and Set Features commands. So using read_buf and write_buf is wrong for 16-bit wide nand chips as they use I/O[15:0]. The Get Features command is easily fixed using 4 times the read_byte callback. For Set Features implement a new overwritable callback "write_byte". Still I expect the default to work just fine for all controllers and making it overwriteable was just done for symmetry. Signed-off-by: NUwe Kleine-König <u.kleine-koenig@pengutronix.de> [Brian: fixed warning] Tested-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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- 14 1月, 2014 4 次提交
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由 Brian Norris 提交于
To be consistent with the rest of include/linux/mtd/nand.h, we should use the __packed shorthand instead of __attribute__((packed)). Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Acked-by: NHuang Shijie <b32955@freescale.com>
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由 Brian Norris 提交于
Micron provides READ RETRY support via the ONFI vendor-specific parameter block (to indicate how many read-retry modes are available) and the ONFI {GET,SET}_FEATURES commands with a vendor-specific feature address (to support reading/switching the current read-retry mode). The recommended sequence is as follows: 1. Perform PAGE_READ operation 2. If no ECC error, we are done 3. Run SET_FEATURES with feature address 89h, mode 1 4. Retry PAGE_READ operation 5. If ECC error and there are remaining supported modes, increment the mode and return to step 3. Otherwise, this is a true ECC error. 6. Run SET_FEATURES with feature address 89h, mode 0, to return to the default state. This patch implements the chip->setup_read_retry() callback for Micron and fills in the chip->read_retries. Tested on Micron MT29F32G08CBADA, which supports 8 read-retry modes. The Micron vendor-specific table was checked against the datasheets for the following Micron NAND: Needs retry Cell-type Part number Vendor revision Byte 180 ----------- --------- ---------------- --------------- ------------ No SLC MT29F16G08ABABA 1 Reserved (0) No MLC MT29F32G08CBABA 1 Reserved (0) No SLC MT29F1G08AACWP 1 0 Yes MLC MT29F32G08CBADA 1 08h Yes MLC MT29F64G08CBABA 2 08h Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Acked-by: NHuang Shijie <b32955@freescale.com>
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由 Brian Norris 提交于
Modern MLC (and even SLC?) NAND can experience a large number of bitflips (beyond the recommended correctability capacity) due to drifts in the voltage threshold (Vt). These bitflips can cause ECC errors to occur well within the expected lifetime of the flash. To account for this, some manufacturers provide a mechanism for shifting the Vt threshold after a corrupted read. The generic pattern seems to be that a particular flash has N read retry modes (where N = 0, traditionally), and after an ECC failure, the host should reconfigure the flash to use the next available mode, then retry the read operation. This process repeats until all bitfips can be corrected or until the host has tried all available retry modes. This patch adds the infrastructure support for a vendor-specific/flash-specific callback, used for setting the read-retry mode (i.e., voltage threshold). For now, this patch always returns the flash to mode 0 (the default mode) after a successful read-retry, according to the flowchart found in Micron's datasheets. This may need to change in the future if it is determined that eventually, mode 0 is insufficient for the majority of the flash cells (and so for performance reasons, we should leave the flash in mode 1, 2, etc.). Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Acked-by: NHuang Shijie <b32955@freescale.com>
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由 Brian Norris 提交于
Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Acked-by: NHuang Shijie <b32955@freescale.com>
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- 04 1月, 2014 1 次提交
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由 Brian Norris 提交于
s/strenght/strength/ This field isn't used anywhere, so this rename is safe. Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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- 28 10月, 2013 3 次提交
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由 Huang Shijie 提交于
The @cellinfo fields contains unused information, such as write caching, internal chip numbering, etc. But we only use it to check the SLC or MLC. This patch tries to make it more clear and simple, renames the @cellinfo to @bits_per_cell. In order to avoiding the bisect issue, this patch also does the following changes: (0) add a macro NAND_CI_CELLTYPE_SHIFT to avoid the hardcode. (1) add a helper to parse out the cell type : nand_get_bits_per_cell() (2) parse out the cell type for extended-ID chips and the full-id nand chips. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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由 Huang Shijie 提交于
Add a helper to check if a nand chip is SLC or MLC. This helper makes the code more readable. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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由 Brian Norris 提交于
This field is never used, except to print it out. Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
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- 31 8月, 2013 4 次提交
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由 Huang Shijie 提交于
Add an instance of an anonymous struct to store the ECC info for full id nand chips. @ecc.strength_ds: ECC correctability from the datasheet. @ecc.step_ds: ECC size required by the @ecc.strength_ds, These two fields are all from the datasheet. Also add the necessary macros to make the code simple and clean. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
add a helper to get the supported features for ONFI nand. Also add the neccessary macros. Signed-off-by: NHuang Shijie <b32955@freescale.com> Reviewed-and-tested-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
Since the ONFI 2.1, the onfi spec adds the Extended Parameter Page to store the ECC info. The onfi spec tells us that if the nand chip's recommended ECC codeword size is not 512 bytes, then the @ecc_bits is 0xff. The host _SHOULD_ then read the Extended ECC information that is part of the extended parameter page to retrieve the ECC requirements for this device. This patch adds [1] the neccessary fields for nand_onfi_params{}, [2] and adds the onfi_ext_ecc_info{} for Extended ECC information, [3] adds onfi_ext_section{} for extended sections, [4] and adds onfi_ext_param_page{} for the Extended Parameter Page. Acked-by: NPekon Gupta <pekon@ti.com> Signed-off-by: NHuang Shijie <b32955@freescale.com> Reviewed-and-tested-by: NBrian Norris <computersforpeace@gmail.com> [Brian: amended for checkpatch.pl] Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
1.) Why add the ECC information to the nand_chip{} ? Each nand chip has its requirement for the ECC correctability, such as "4bit ECC for each 512Byte" or "40bit ECC for each 1024Byte". This ECC info is very important to the nand controller, such as gpmi. Take the Micron MT29F64G08CBABA for example, its geometry is 8KiB page size, 744 bytes oob size and it requires 40bit ECC per 1KiB. If we do not provide the ECC info to the gpmi nand driver, it has to calculate the ECC correctability itself. The gpmi driver will gets the 56bit ECC for per 1KiB which is beyond its BCH's 40bit ecc capibility. The gpmi will quits in this case. But in actually, the gpmi can supports this nand chip if it can get the right ECC info. 2.) about the new fields. The @ecc_strength_ds stands for the ecc bits needed within the @ecc_step_ds. The two fields should be set from the nand chip's datasheets. For example: "4bit ECC for each 512Byte" could be: @ecc_strength_ds = 4, @ecc_step_ds = 512. "40bit ECC for each 1024Byte" could be: @ecc_strength_ds = 40, @ecc_step_ds = 1024. 3.) Why do not re-use the @strength and @size in the nand_ecc_ctrl{}? The @strength and @size in nand_ecc_ctrl{} is used by the nand controller driver, while the @ecc_strength_ds and @ecc_step_ds are get from the datasheet. Signed-off-by: NHuang Shijie <b32955@freescale.com> Reviewed-and-tested-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 30 8月, 2013 1 次提交
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由 Brian Norris 提交于
nand_base.c shouldn't have to know the implementation details of nand_bbt's in-memory BBT. Specifically, nand_base shouldn't perform the bit masking and shifting to isolate a BBT entry. Instead, just move some of the BBT code into a new nand_markbad_bbt() interface. This interface allows external users (i.e., nand_base) to mark a single block as bad in the BBT. Then nand_bbt will take care of modifying the in-memory BBT and updating the flash-based BBT (if applicable). Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 06 8月, 2013 3 次提交
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由 David Mosberger 提交于
Spansion's S34MLx chips support ONFI but not the GET/SET FEATURES calls. Signed-off-by: NDavid Mosberger <dmosberger@gmail.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
The oob size of Micron's MT29F64G08CBABAWP is 744 bytes. So increase the NAND_MAX_OOBSIZE to 744. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
This remedies a few problems: (1) The use of "the" vs. "a" is a little confusing, IMO. (2) nand_chip.block_bad is used exclusively for checking the OOB bad block markers of a NAND. Any BBT functionality is handled in nand_bbt.c, so this description should differentiate itself from nand_bbt.c. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 05 4月, 2013 13 次提交
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由 Gupta, Pekon 提交于
This patch adds support for subpage (partial-page) writes when using hardware based ECC schemes. Advantages: (1) reduces storage overhead when using file-systems like UBIFS, which store LEB header at page-size granularity. (2) allows independent subpage writes, thereby increasing NAND storage efficiency for non-page aligned data. + updated cafe_nand and lpc32xx_mlc NAND drivers for change in chip->write_page interface. Signed-off-by: NGupta, Pekon <pekon@ti.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Notice that all the flashes belonging to the "legacy ID" class have 512 bytes NAND page. This means we may simplify the 'LEGACY_ID_NAND()' macro as well as the NAND ID table a little. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
As time goes on, we begin to meet the situation that we can not get enough information from some nand chips's id data. Take some Toshiba's nand chips for example. I have 4 Toshiba's nand chips in my hand: TC58NVG2S0F, TC58NVG3S0F, TC58NVG5D2, TC58NVG6D2 When we read these chips' datasheets, we will get the geometry of these chips: TC58NVG2S0F : 4096 + 224 TC58NVG3S0F : 4096 + 232 TC58NVG5D2 : 8192 + 640 TC58NVG6D2 : 8192 + 640 But we can not parse out the correct oob size for these chips from the id data. This patch adds some new fields to the nand_flash_dev{}: @id_len: the valid length of the id data. See the comments in nand_id_has_period() @oobsize: the oob size. Signed-off-by: NHuang Shijie <b32955@freescale.com> Reviewed-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Introduce a helpful macro for the maximum NAND ID sequence length instead of using the "8" magic number. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Acked-by: NHuang Shijie <shijie8@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Use 'unsigned int' instead of 'unsigned long' in the NAND chip description data structure, because 32-bits is more than enough for our purposes. We do not need 64-bits, which is what we end up on 64-bit architectures. We declare many instances of this data structure, so this should help saving some amount of memory. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Up until now we identified NAND chips by the 'device ID' part of the full chip ID array, which is the second full ID array byte. However, the newest flashes use the same device ID for chips with identical page and eraseblock sizes, but different OOB sizes. And unfortunately, it is not clear if there is a "standard" way to fetch the OOB size from chip's full ID array. Here is an example: Toshiba TC58NVG2S0F: 0x98, 0xdc, 0x90, 0x26, 0x76, 0x15, 0x01, 0x08 Toshiba TC58NVG3S0F: 0x98, 0xd3, 0x90, 0x26, 0x76, 0x15, 0x02, 0x08 The first one is a 512MiB NAND chip with 4KiB NAND pages, 256KiB eraseblock size and 224 bytes OOB. The second one is a 1GiB NAND chip with the same page and eraseblock sizes, but with 232 bytes OOB. This means that we have to store full ID in our NAND flashes table in order to distinguish between these 2. This patch adds the 'id[8]' field to the 'struct nand_flash_dev' structure, and it makes it to be a part of anonymous union, where the second member is a structure containing the 'mfr_id' and 'dev_id' bytes. The union makes sure that 'mfr_id' refers the same RAM address as 'id[0]' and 'dev_id' refers the same RAM address as 'id[1]'. The only motivation for the union is an assumption that 'type->dev_id' is more readable than 'type->id[1]'. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Introduce helper macros for defining NAND chips. These macros do not really add much value in the current code-base. However, we are going to add full ID support which adds some more complexity to the table, and helper macros become useful for readability. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
The 'id' is a bit confusing name because NAND IDs are multi-byte. Re-name it to 'dev_id' to make it clear that this is the "device ID" part (the second byte). While on it, clean-up the commentary for 'struct nand_flash_dev'. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Acked-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
We have this unused macro, let's use it and justify its existence. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Acked-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
It is unused. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Acked-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
It is not used anywhere. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Acked-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Acked-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
We have only one AG-AND driver and it was not touched since 2005. It looks like AG-AND was not really make it to mass-production and can be considered a dead technology. Along with the AG-AND support, this patch removes the BBT_AUTO_REFRESH feature, because the only user of this feature is AG-AND. And even though it is implemented as a generic feature, I prefer to remove it because NAND flashes do not really need it in this form. Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Acked-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 14 3月, 2013 1 次提交
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由 Brian Norris 提交于
This partially reverts commit 1696e6bc ("mtd: nand: kill NAND_NO_READRDY"). In that patch I overlooked a few things. The original documentation for NAND_NO_READRDY included "True for all large page devices, as they do not support autoincrement." I was conflating "not support autoincrement" with the NAND_NO_AUTOINCR option, which was in fact doing nothing. So, when I dropped NAND_NO_AUTOINCR, I concluded that I then could harmlessly drop NAND_NO_READRDY. But of course the fact the NAND_NO_AUTOINCR was doing nothing didn't mean NAND_NO_READRDY was doing nothing... So, NAND_NO_READRDY is re-introduced as NAND_NEED_READRDY and applied only to those few remaining small-page NAND which needed it in the first place. Cc: stable@kernel.org [3.5+] Reported-by: NAlexander Shiyan <shc_work@mail.ru> Tested-by: NAlexander Shiyan <shc_work@mail.ru> Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 03 12月, 2012 1 次提交
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由 Matthieu CASTET 提交于
The driver call nand_scan_ident in 8 bit mode, then readid or onfi detection are done (and detect bus width). The driver should update its bus width before calling nand_scan_tail. This work because readid and onfi are read work 8 byte mode. Note that nand_scan_ident send command (NAND_CMD_RESET, NAND_CMD_READID, NAND_CMD_PARAM), address and read data The ONFI specificication is not very clear for x16 device if high byte of address should be driven to 0, but according to [1] it should be ok to not drive it during autodetection. [1] 3.3.2. Target Initialization [...] The Read ID and Read Parameter Page commands only use the lower 8-bits of the data bus. The host shall not issue commands that use a word data width on x16 devices until the host determines the device supports a 16-bit data bus width in the parameter page. Signed-off-by: NMatthieu CASTET <matthieu.castet@parrot.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
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- 15 11月, 2012 1 次提交
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由 Robert P. J. Day 提交于
Add missing colons to fix kernel-doc generation warnings. Signed-off-by: NRobert P. J. Day <rpjday@crashcourse.ca> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
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- 29 9月, 2012 3 次提交
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由 Brian Norris 提交于
Some Hynix and Samsung MLC NAND have 640B OOB size. Sooner or later, we should dynamically allocate the buffers that use these macros. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
add onfi_get_async_timing_mode() to get the supportted asynchronous timing mode. add onfi_get_sync_timing_mode() to get the supportted synchronous timing mode. Also add the neccessary macros : the timing modes. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
Add the set-features(0xef)/get-features(0xee) helpers for ONFI nand. Also add the necessary macros. Signed-off-by: NHuang Shijie <b32955@freescale.com> Signed-off-by: NArtem Bityutskiy <artem.bityutskiy@linux.intel.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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