- 11 9月, 2011 5 次提交
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由 Jiri Pinkava 提交于
This delay is meaningless. If delay is needed it is device specific and must be reimplemented by specific driver, otherwise no delay is needed. Signed-off-by: NJiri Pinkava <jiri.pinkava@vscht.cz> Acked-by: NVimal Singh <vimal.newwork@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
Recall the recently added prefix requirements: * "NAND_" for flags in nand.h, used in nand_chip.options * "NAND_BBT_" for flags in bbm.h, used in nand_chip.bbt_options or in nand_bbt_descr.options Thus, I am changing NAND_USE_FLASH_BBT to NAND_BBT_USE_FLASH. Again, this flag is found in bbm.h and so should NOT be used in the "nand_chip.options" field. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
This patch works with the following three flags from two headers (nand.h and bbm.h): (1) NAND_USE_FLASH_BBT (nand.h) (2) NAND_USE_FLASH_BBT_NO_OOB (nand.h) (3) NAND_BBT_NO_OOB (bbm.h) These flags are all related and interdependent, yet they were in different headers. Flag (2) is simply the combination of (1) and (3) and can be eliminated. This patch accomplishes the following: * eliminate NAND_USE_FLASH_BBT_NO_OOB (i.e., flag (2)) * move NAND_USE_FLASH_BBT (i.e., flag (1)) to bbm.h It's important to note that because (1) and (3) are now both found in bbm.h, they should NOT be used in the "nand_chip.options" field. I removed a small section from the mtdnand DocBook because it referes to NAND_USE_FLASH_BBT in nand.h, which has been moved to bbm.h. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
This patch handles the problems we've been having with using conflicting flags from nand.h and bbm.h in the same nand_chip.options field. We should try to separate these two spaces a little more clearly, and so I have added a bbt_options field to nand_chip. Important notes about nand_chip fields: * bbt_options field should contain ONLY flags from bbm.h. They should be able to pass safely to a nand_bbt_descr data structure. - BBT option flags start with the "NAND_BBT_" prefix. * options field should contian ONLY flags from nand.h. Ideally, they should not be involved in any BBT related options. - NAND chip option flags start with the "NAND_" prefix. * Every flag should have a nice comment explaining what the flag is. While this is not yet the case on all existing flags, please be sure to write one for new flags. Even better, you can help document the code better yourself! Please try to follow these conventions to make everyone's lives easier. Among the flags that are being moved to the new bbt_options field throughout various drivers, etc. are: * NAND_BBT_SCANLASTPAGE * NAND_BBT_SCAN2NDPAGE and there will be more to come. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
This patch reverts most of: commit 58373ff0 mtd: nand: more BB Detection refactoring and dynamic scan options According to the discussion at: http://lists.infradead.org/pipermail/linux-mtd/2011-May/035696.html the NAND_BBT_SCANBYTE1AND6 flag, although technically valid, can break some existing ECC layouts that use the 6th byte in the OOB for ECC data. Furthermore, we apparently do not need to scan both bytes 1 and 6 in the OOB region of the devices under consideration; instead, we only need to scan one or the other. Thus, the NAND_BBT_SCANBYTE1AND6 flag is at best unnecessary and at worst a regression. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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- 25 5月, 2011 3 次提交
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由 Jamie Iles 提交于
Convert to mtd_device_register() and remove the CONFIG_MTD_PARTITIONS preprocessor conditionals as partitioning is always available. Signed-off-by: NJamie Iles <jamie@jamieiles.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
In commit c7b28e25 the initialization of the backblockbits was accidentally removed. This patch returns it back, because otherwise some NAND drivers are broken. This problem was reported by "Saxena, Parth <parth.saxena@ti.com>" here: http://lists.infradead.org/pipermail/linux-mtd/2011-April/035221.htmlReported-by: NSaxena, Parth <parth.saxena@ti.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Tested-by: NSaxena, Parth <parth.saxena@ti.com> Acked-by: NSaxena, Parth <parth.saxena@ti.com> Acked-by: NBrian Norris <computersforpeace@gmail.com> Cc: stable@kernel.org [2.6.36+] Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Jiri Pinkava 提交于
Chip deselection is already done in nand_release_device. So only duplicate code. Signed-off-by: NJiri Pinkava <jiri.pinkava@vscht.cz> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 31 3月, 2011 1 次提交
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由 Lucas De Marchi 提交于
Fixes generated by 'codespell' and manually reviewed. Signed-off-by: NLucas De Marchi <lucas.demarchi@profusion.mobi>
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- 12 3月, 2011 1 次提交
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由 Ivan Djelic 提交于
This patch adds software BCH ECC support to mtd, in order to handle recent NAND device ecc requirements (4 bits or more). It does so by adding a new ecc mode (NAND_ECC_SOFT_BCH) for use by board drivers, and a new Kconfig option to enable BCH support. It relies on the generic BCH library introduced in a previous patch. When a board driver uses mode NAND_ECC_SOFT_BCH, it should also set fields chip->ecc.size and chip->ecc.bytes to select BCH ecc data size and required error correction capability. See nand_bch_init() documentation for details. It has been tested on the following platforms using mtd-utils, UBI and UBIFS: x86 (with nandsim), arm926ejs. Signed-off-by: NIvan Djelic <ivan.djelic@parrot.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 11 3月, 2011 1 次提交
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由 Jason Liu 提交于
Signed-off-by: NJason Liu <r64343@freescale.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 06 1月, 2011 4 次提交
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由 Anatolij Gustschin 提交于
Initialize mtd->writebufsize to be equal to mtd->writesize. Signed-off-by: NAnatolij Gustschin <agust@denx.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
In checking for the ONFI revision, the first conditional (for checking "unsupported" ONFI) seems unnecessary. All ONFI revisions should be backwards-compatible; even if this is not the case on some newer ONFI revision, it should simply fail the second version-checking if-else block (i.e., the bit-fields for 1.0, 2.0, etc. would not be set to 1). Thus, we move our "unsupported" condition after having checked each bit field. Also, it's simple enough to add a condition for ONFI revision 2.3. Note that this does *NOT* mean we handle all new features of ONFI versions above 1.0. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Acked-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
We have the order of the conditional wrong for choosing the ONFI chip name vs. the ID table name. Without this fix, we will almost *always* choose a NULL string to print out instead of the correct one. This has already been suggested by Matthieu Castet. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Acked-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
This reverts commit e14feafb. The commit limits the maximum amount of bytes which can be read at one go to the OOB size, which is incorrect, because mtd->read_oob() allows reading multiple pages at a time, see comment near "struct mtd_oob_ops" at include/linux/mtd/mtd.h. So this patch breaks ABI and hence, has to be reverted. Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 04 12月, 2010 2 次提交
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由 David Woodhouse 提交于
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Jason Liu 提交于
When run mtd_oobtest case, there will be one error for step(4), which turned out it need add one check for out of page read in nand_do_read_oob just like mtd_do_write_oob did it already. This commit also fix one typo error for comments in mtd_do_write_oob Signed-off-by: NJason Liu <r64343@freescale.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 02 11月, 2010 1 次提交
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由 Uwe Kleine-König 提交于
"gadget", "through", "command", "maintain", "maintain", "controller", "address", "between", "initiali[zs]e", "instead", "function", "select", "already", "equal", "access", "management", "hierarchy", "registration", "interest", "relative", "memory", "offset", "already", Signed-off-by: NUwe Kleine-König <u.kleine-koenig@pengutronix.de> Signed-off-by: NJiri Kosina <jkosina@suse.cz>
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- 25 10月, 2010 11 次提交
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由 Jon Povey 提交于
RAW writes were broken by 782ce79a which introduced a check of ops->ooboffs in nand_do_write_ops(). When writing in RAW mode this is called with an ops struct on the stack of mtdchar.c:mtd_write() which does not initialise ops->ooboffs, so it is garbage and fails this test. This test does not make sense if ops->oobbuf is NULL, which it is in the RAW write path, so include that in the test. Signed-off-by: NJon Povey <jon.povey@racelogic.co.uk> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
Not all the NAND devices have all the information in additional id bytes. So add a hook in the nand_chip{} is a good method to calculate the right value of oobsize, erasesize and so on. Without the hook,you will get the wrong value, and you have to hack in the ->scan_bbt() to change the wrong value which make the code mess. Signed-off-by: NHuang Shijie <shijie8@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Currently MTD caches the last read NAND page, even if there was an uncorrectable ECC error. This patch prevents caching in case of uncorrectable ECC errors. The reason is that we want to allow the user to re-read the NAND page several times. In case of unstable bits re-trying may help. Moreover, current behavior is wrong because the first read returns -EBADMSG (correctly) but the second read succeeds and incorrectly returns 0 (because we read from the cache). Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
Only 3 warnings are left, one is off by one character, but splitting the line would reduce the readability. One is for a for loop statement, which would also not improve readability. The last one is a false positive on a test. Artem: it is much easier to verify patches against nand_base.c with checkpatch.pl when nand_base.c itself does not have so many checkpatch.pl warnings. Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
Artem: it is much easier to verify patches against nand_base.c with checkpatch.pl when nand_base.c itself does not have so many checkpatch.pl warnings. Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
In order to reduce the indentation and improve the readability of nand_get_ flash_type, split the ONFI detection logic to its own function. The detection logic inside nand_flash_detect_onfi is also rewritten to allow for less indentation. Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
This patch adds support for reading NAND device ONFI parameters and use the ONFI informations to define its geometry. In case the device supports ONFI, the onfi_version field in struct nand_chip contains the version (BCD) and the onfi_params structure can be used by drivers to set up timings and such. We currently only support ONFI 1.0 parameters. Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NMatthieu Castet <matthieu.castet@parrot.com> Signed-off-by: NMaxime Bizon <mbizon@freebox.fr> Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
There are some additions to the detection scheme used by Samsung MLC NAND. These simple changes to support the 400- and 436-byte OOB are found in the following data sheet: Samsung K9GBG08U0M (p.40) Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
Toshiba does not use ONFI for their NAND flash. So we have to continue to add new IDs used by Toshiba devices as well as heuristic detection for scanning the 2nd page for a BBM. This is a relatively harmless start at supporting many of them. These chips mostly follow the same ID fields of previous generations, but there is a need for a tweak. These chips introduce a strange 576 byte OOB (that's 36 bytes per 512 bytes of page). In the preliminary data, Toshiba has not defined exactly how their ID strings should decode. In the future, a new tweak must be added. Data is taken from, among others, Toshiba TC58TxG4S2FBAxx Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
Some Spansion chips have a method for determining eraseblock size that is incompatible with similar ID chips of other sizes. This implements some heuristic detection of these differences. This patch checks for a 5-byte ID with trailing zeros as well as a 512-byte page size to ensure that chips are not misdetected as the S30MLxxxP ORNAND series. [Tweaked by Artem a bit] Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Baruch Siach 提交于
Drivers may (and do) return negative errno values other than -1 from the ecc.correct callback. Signed-off-by: NBaruch Siach <baruch@tkos.co.il> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 21 8月, 2010 1 次提交
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由 Tilman Sauerbeck 提交于
Apparently, the check for a 6-byte ID string introduced by commit 426c457a ("mtd: nand: extend NAND flash detection to new MLC chips") is NOT sufficient to determine whether or not a Samsung chip uses their new MLC detection scheme or the old, standard scheme. This adds a condition to check cell type. Signed-off-by: NTilman Sauerbeck <tilman@code-monkey.de> Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com> Cc: stable@kernel.org
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- 19 8月, 2010 1 次提交
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由 Brian Norris 提交于
Commit c7b28e25 ("mtd: nand: refactor BB marker detection") caused a regression in detection of factory-set bad block markers, especially for certain small-page NAND. This fix removes some unneeded constraints on using NAND_SMALL_BADBLOCK_POS, making the detection code more correct. This regression can be seen, for example, in Hynix HY27US081G1M and similar. Signed-off-by: NBrian Norris <norris@broadcom.com> Tested-by: NMichael Guntsche <mike@it-loops.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 11 8月, 2010 2 次提交
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由 Randy Dunlap 提交于
Fix mtd/nand_base.c kernel-doc warnings and typos. Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'mtd' Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'ofs' Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'len' Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'invert' Warning(drivers/mtd/nand/nand_base.c:930): No description found for parameter 'mtd' Warning(drivers/mtd/nand/nand_base.c:930): No description found for parameter 'ofs' Warning(drivers/mtd/nand/nand_base.c:930): No description found for parameter 'len' Warning(drivers/mtd/nand/nand_base.c:987): No description found for parameter 'mtd' Warning(drivers/mtd/nand/nand_base.c:987): No description found for parameter 'ofs' Warning(drivers/mtd/nand/nand_base.c:987): No description found for parameter 'len' Warning(drivers/mtd/nand/nand_base.c:2087): No description found for parameter 'len' Signed-off-by: NRandy Dunlap <randy.dunlap@oracle.com> Cc: David Woodhouse <dwmw2@infradead.org> Signed-off-by: NAndrew Morton <akpm@linux-foundation.org> Signed-off-by: NLinus Torvalds <torvalds@linux-foundation.org>
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由 Randy Dunlap 提交于
Fix mtd/nand_base.c kernel-doc warnings and typos. Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'mtd' Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'ofs' Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'len' Warning(drivers/mtd/nand/nand_base.c:893): No description found for parameter 'invert' Warning(drivers/mtd/nand/nand_base.c:930): No description found for parameter 'mtd' Warning(drivers/mtd/nand/nand_base.c:930): No description found for parameter 'ofs' Warning(drivers/mtd/nand/nand_base.c:930): No description found for parameter 'len' Warning(drivers/mtd/nand/nand_base.c:987): No description found for parameter 'mtd' Warning(drivers/mtd/nand/nand_base.c:987): No description found for parameter 'ofs' Warning(drivers/mtd/nand/nand_base.c:987): No description found for parameter 'len' Warning(drivers/mtd/nand/nand_base.c:2087): No description found for parameter 'len' Signed-off-by: NRandy Dunlap <randy.dunlap@oracle.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 09 8月, 2010 1 次提交
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由 David Woodhouse 提交于
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 02 8月, 2010 4 次提交
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由 Brian Norris 提交于
This is an update that depends on the previous patches I sent. We can now write to all the appropriate BB marker locations (i.e. pages 1 AND 2, bytes 1 AND 6) with nand_default_block_markbad() if necessary, according to the flags marked in chip->options. Note that I removed the line: ofs += mtd->oobsize; Unless I am wrong, this line was completely unnecessary in the first place. Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
This is a revision to PATCH 2/2 that I sent. Link: http://lists.infradead.org/pipermail/linux-mtd/2010-July/030911.html Added new flag for scanning of both bytes 1 and 6 of the OOB for a BB marker (instead of simply one or the other). The "check_pattern" and "check_short_pattern" functions were updated to include support for scanning the two different locations in the OOB. In order to handle increases in variety of necessary scanning patterns, I implemented dynamic memory allocation of nand_bbt_descr structs in new function 'nand_create_default_bbt_descr()'. This replaces some increasingly-unwieldy, statically-declared descriptors. It can replace several more (e.g. "flashbased" structs). However, I do not test the flashbased options personally. How this was tested: I referenced 30+ data sheets (covering 100+ parts), and I tested a selection of 10 different chips to varying degrees. Particularly, I tested the creation of bad-block descriptors and basic BB scanning on three parts: ST NAND04GW3B2D, 2K page ST NAND128W3A, 512B page Samsung K9F1G08U0A, 2K page To test these, I wrote some fake bad block markers to the flash (in OOB bytes 1, 6, and elsewhere) to see if the scanning routine would detect them properly. However, this method was somewhat limited because the driver I am using has some bugs in its OOB write functionality. Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
Some level of support for various scanning locations was already built in, but this required clean-up. First, BB marker location cannot be determined _only_ by the page size. Instead, I implemented some heuristic detection based on data sheets from various manufacturers (all found in nand_base.c:nand_get_flash_type()). Second, once these options were identified, they were not handled properly by nand_bbt.c:nand_default_bbt(). I updated the static nand_bbt_desc structs to reflect the need for more combinations of detection. The memory allocation here probably needs to be done dynamically in the very near future (see next patches). Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
NAND_BB_LAST_PAGE used to be in nand.h, but it pertained to bad block management and so belongs next to NAND_BBT_SCAN2NDPAGE in bbm.h. Also, its previous flag value (0x00000400) conflicted with NAND_BBT_SCANALLPAGES so I changed its value to 0x00008000. All uses of the name were modified to provide consistency with other "NAND_BBT_*" flags. Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 14 5月, 2010 2 次提交
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由 Kevin Cernekee 提交于
This is a slightly modified version of a patch submitted last year by Reuben Dowle <reuben.dowle@navico.com>. His original comments follow: This patch adds support for some MLC NAND flashes that place the BB marker in the LAST page of the bad block rather than the FIRST page used for SLC NAND and other types of MLC nand. Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND): " Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. ... " As far as I can tell, this is the same for all Samsung MLC nand, and in fact the samsung bsp for the processor used in our project (s3c6410) actually contained a hack similar to this patch but less portable to enable use of their NAND parts. I discovered this problem when trying to use a Micron NAND which does not used this layout - I wish samsung would put their stuff in main-line to avoid this type of problem. Currently this patch causes all MLC nand with manufacturer codes from Samsung and ST(Numonyx) to use this alternative location, since these are the manufactures that I know of that use this layout. Signed-off-by: NKevin Cernekee <cernekee@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Kevin Cernekee 提交于
Some of the newer MLC devices have a 6-byte ID sequence in which several field definitions differ from older chips in a manner that is not backward compatible. For instance: Samsung K9GAG08U0M (5-byte sequence): ec d5 14 b6 74 4th byte, bits 1:0 encode the page size: 0=1KiB, 1=2KiB, 2=4KiB, 3=8KiB 4th byte, bits 5:4 encode the block size: 0=64KiB, 1=128KiB, ... 4th byte, bit 6 encodes the OOB size: 0=8B/512B, 1=16B/512B Samsung K9GAG08U0D (6-byte sequence): ec d5 94 29 34 41 4th byte, bits 1:0 encode the page size: 0=2KiB, 1=4KiB, 3=8KiB, 4=rsvd 4th byte, bits 7;5:4 encode the block size: 0=128KiB, 1=256KiB, ... 4th byte, bits 6;3:2 encode the OOB size: 1=128B/page, 2=218B/page This patch uses the new 6-byte scheme if the following conditions are all true: 1) The ID code wraps around after exactly 6 bytes 2) Manufacturer is Samsung 3) 6th byte is zero The patch also extends the maximum OOB size from 128B to 256B. Signed-off-by: NKevin Cernekee <cernekee@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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