- 25 10月, 2010 40 次提交
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Remove tabs between type and name. Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- *var instead of * var - proper multiline comment - func(args) instead of func (args) - 80 lines So from |total: 2 errors, 37 warnings, 654 lines checked we got to one warning. Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Ian Munsie 提交于
This patch adds the appropriate conversions to correct the endianness issues in the MTD driver whenever it accesses the device tree (which is always big endian). Signed-off-by: NIan Munsie <imunsie@au1.ibm.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 David Jander 提交于
Signed-off-by: NDavid Jander <david@protonic.nl> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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I used this to check the BBT on flash together with a hack in mtdchar in order to read bad blocks. Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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it will create an empty BBT table without considering vendor's BBT information. Vendor's information may be unavailable if the NAND controller has a different DATA & OOB layout or this information may be allready purged. Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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The first (sixt) byte in the OOB area contains vendor's bad block information. During identification of the NAND chip this information is collected by scanning the complete chip. The option NAND_USE_FLASH_BBT is used to store this information in a sector so we don't have to scan the complete flash. Unfortunately the code stores a marker in order to recognize the BBT in the OOB area. This will fail if the OOB area is completely used for ECC. This patch introduces the option NAND_USE_FLASH_BBT_NO_OOB which has to be used with NAND_USE_FLASH_BBT. It will then store BBT on flash without touching the OOB area. The BBT format on flash remains same except the first page starts with the recognition pattern followed by the version byte. This change was tested in nandsim and it looks good so far :) Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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No code change. Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Kyungmin Park 提交于
S5PC210 has the same OneNAND controller as S5PC110 Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Kyungmin Park 提交于
Implement DMA interrupt method. previous time it polls the DMA status. It can reduce the CPU power but decrease the performance a little. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Kyungmin Park 提交于
When use HIGHMEM, dma_map_single doesn't get the proper DMA address. So use the dma_map_page in this case. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Kyungmin Park 提交于
After S5PC110 use the generic method for OneNAND. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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The MLC NAND Flash differs from the SLC NAND flash in functioning and the cell structure. Therefore we are considering it as a different Flash type. Signed-off-by: NRohit H.S <rohit.hs@samsung.com> Signed-off-by: NRaghav Gupta <gupta.raghav@samsung.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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MLC NAND Flash has a different cell structure and differs in functioning than the SLC NAND Flash. Hence we are considering it as a different Flash type. Signed-off-by: NRohit H.S <rohit.hs@samsung.com> Signed-off-by: NRaghav Gupta <gupta.raghav@samsung.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Kyungmin Park 提交于
There's no case timeout but add it for some H/W problem or wrong codes implementation Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Huang Shijie 提交于
Not all the NAND devices have all the information in additional id bytes. So add a hook in the nand_chip{} is a good method to calculate the right value of oobsize, erasesize and so on. Without the hook,you will get the wrong value, and you have to hack in the ->scan_bbt() to change the wrong value which make the code mess. Signed-off-by: NHuang Shijie <shijie8@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Mike Frysinger 提交于
The jffs2 compression framework provides a "model" argument when compressing and decompressing, but the caller always passes in NULL and the callees never use it. So punt this useless overhead. Signed-off-by: NMike Frysinger <vapier@gentoo.org> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Roman Tereshonkov 提交于
Add support for mtd repartition based on the block device BLKPG interface: BLKPG_ADD_PARTITION - for partition creation; BLKPG_DEL_PARTITION - for partition delete The usage is based on BLKPG ioctl called with struct blkpg_ioctl_arg argument which includes the reference to struct blkpg_partition discribing the partition offset and length. Disadvantage: there is no implementation for mtd flags control. The flags are always borrowed from the master device. Signed-off-by: NRoman Tereshonkov <roman.tereshonkov@nokia.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Roman Tereshonkov 提交于
mtd_is_master, mtd_add_partition and mtd_del_partition functions are added to give the possibility of partition manipulation by ioctl request. The old partition add function is modified to fit the dynamic allocation. Signed-off-by: NRoman Tereshonkov <roman.tereshonkov@nokia.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Linus Walleij 提交于
Just as it says, if this is merged along with the other patch, the driver supports the U300 NAND flash interface. Signed-off-by: NLinus Walleij <linus.walleij@stericsson.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Linus Walleij 提交于
This is the same driver submitted by ST Micros SPEAr team but generalized and tested on the ST-Ericsson U300. It probably easily works on the NHK8815 too. Signed-off-by: NVipin Kumar <vipin.kumar@st.com> Signed-off-by: NRajeev Kumar <rajeev-dlh.kumar@st.com> Signed-off-by: NShiraz Hashim <shiraz.hashim@st.com> Signed-off-by: NViresh Kumar <viresh.kumar@st.com> Signed-off-by: NLinus Walleij <linus.walleij@stericsson.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Wolfram Sang 提交于
yield() has different semantics meanwhile and even causes RT-kernels to BUG. Replace the only appearance left in jffs2. Signed-off-by: NWolfram Sang <w.sang@pengutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Thierry Reding 提交于
This patch adds support for the Winbond W25Q64 serial flash. Signed-off-by: NThierry Reding <thierry.reding@avionic-design.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Artem Bityutskiy 提交于
Currently MTD caches the last read NAND page, even if there was an uncorrectable ECC error. This patch prevents caching in case of uncorrectable ECC errors. The reason is that we want to allow the user to re-read the NAND page several times. In case of unstable bits re-trying may help. Moreover, current behavior is wrong because the first read returns -EBADMSG (correctly) but the second read succeeds and incorrectly returns 0 (because we read from the cache). Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
This patch adds support for parsing Broadcom BCM63xx image tag format and creating MTD partitions accordingly. This driver is a platform_device which can be instantiated accordingly by bcm63xx board support code. Signed-off-by: NDaniel Dickinson <cshore@csolve.net> Signed-off-by: NMike Albon <malbon@openwrt.org> Signed-off-by: NFlorian Fainelli <florian@openwrt.org> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Dan Carpenter 提交于
If "ur_idx" is wrong we could go past the end of the array. The "ur_idx" comes from root so it's not a huge deal, but adding a sanity check makes the code more robust. Signed-off-by: NDan Carpenter <error27@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Roy Zang 提交于
Fix the build warning: drivers/mtd/nand/fsl_upm.c: In function 'fun_chip_init': drivers/mtd/nand/fsl_upm.c:190: warning: format '%x' expects type 'unsigned int', but argument 3 has type 'resource_size_t' Signed-off-by: NRoy Zang <tie-fei.zang@freescale.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
Only 3 warnings are left, one is off by one character, but splitting the line would reduce the readability. One is for a for loop statement, which would also not improve readability. The last one is a false positive on a test. Artem: it is much easier to verify patches against nand_base.c with checkpatch.pl when nand_base.c itself does not have so many checkpatch.pl warnings. Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
Artem: it is much easier to verify patches against nand_base.c with checkpatch.pl when nand_base.c itself does not have so many checkpatch.pl warnings. Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Wolfram Sang 提交于
Sudhakar found out that 100µs are enough. Sadly, his updated patch was overlooked and an older version still using 100ms was merged. Fix this. Reference: http://patchwork.ozlabs.org/patch/59180/Signed-off-by: NWolfram Sang <w.sang@pengutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Gernot Hoyler 提交于
This patch adds support for Spansion S25FL016K and S25FL064K SPI flash. It has been tested with physical devices. Note that both parts exhibit a Winbond manufacturer ID so they might also be added to that section. Signed-off-by: NGernot Hoyler <Gernot.Hoyler@spansion.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
In order to reduce the indentation and improve the readability of nand_get_ flash_type, split the ONFI detection logic to its own function. The detection logic inside nand_flash_detect_onfi is also rewritten to allow for less indentation. Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
This patch adds support for reading NAND device ONFI parameters and use the ONFI informations to define its geometry. In case the device supports ONFI, the onfi_version field in struct nand_chip contains the version (BCD) and the onfi_params structure can be used by drivers to set up timings and such. We currently only support ONFI 1.0 parameters. Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NMatthieu Castet <matthieu.castet@parrot.com> Signed-off-by: NMaxime Bizon <mbizon@freebox.fr> Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Florian Fainelli 提交于
This command is used to read the device ONFI parameters page. Signed-off-by: NFlorian Fainelli <ffainelli@freebox.fr> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Kyungmin Park 提交于
S5PC110 OneNAND controller use the generic functions provided from onenand_base. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
There are some additions to the detection scheme used by Samsung MLC NAND. These simple changes to support the 400- and 436-byte OOB are found in the following data sheet: Samsung K9GBG08U0M (p.40) Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Wolfram Sang 提交于
Signed-off-by: NWolfram Sang <w.sang@pengutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Dan Carpenter 提交于
This code isn't reachable. I looked through the git history and it hasn't been reachable for years. Someone removed the label to silence gcc's unused label warning but these few lines accidentally got left behind. Signed-off-by: NDan Carpenter <error27@gmail.com> Acked-by: NDominik Brodowski <linux@dominikbrodowski.net> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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