- 11 9月, 2011 10 次提交
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由 Brian Norris 提交于
Now that nand_do_readoob() may return -EUCLEAN or -EBADMSG on ECC errors, we need to handle the return value specially in some cases. When scanning for simple bad block markers, reacting to an ECC error is not very useful, as we assume that the relevant markers are still non-0xFF for true bad blocks. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <dedekind1@gmail.com>
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由 Brian Norris 提交于
Therefor -> Therefore [Intern], [Internal] -> [INTERN] [REPLACABLE] -> [REPLACEABLE] syndrom, syndom -> syndrome ecc -> ECC buswith -> buswidth endianess -> endianness dont -> don't occures -> occurs independend -> independent wihin -> within erease -> erase blockes -> blocks ... Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
When a memory allocation fails, the kernel will print out a backtrace automatically. These print statements are unnecessary. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
Artem: while on it, do other commentaries clean-ups: 1. Start one-line comments with capital letter and no dot at the end 2. Turn sparse multi-line comments into one-line comments 3. Change "phrase ?" to "phrase?" and the same with "!". 4. Remove tabs from the kerneldoc parameters comments - they are mixed with tabs often, and inconsistent. 5. Put dot at the end of descriptions in kerneldoc comments. 6. Some other small commentaries clean-ups Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
According to our new prefix rules, we should rename NAND_CREATE_EMPTY_BBT with a NAND_BBT prefix, i.e., NAND_BBT_CREATE_EMPTY. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
The NAND_CREATE_EMPTY_BBT flag was added by commit: 453281a9 mtd: nand: introduce NAND_CREATE_EMPTY_BBT This flag is not used within the kernel and not explained well, so I took the liberty to edit its comments. Also, this is a BBT-related flag (and closely tied with NAND_BBT_CREATE) so I'm moving it to bbm.h next to NAND_BBT_CREATE, thus requiring that we use the flag in nand_chip.bbt_options, *not* in nand_chip.options. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
Recall the recently added prefix requirements: * "NAND_" for flags in nand.h, used in nand_chip.options * "NAND_BBT_" for flags in bbm.h, used in nand_chip.bbt_options or in nand_bbt_descr.options Thus, I am changing NAND_USE_FLASH_BBT to NAND_BBT_USE_FLASH. Again, this flag is found in bbm.h and so should NOT be used in the "nand_chip.options" field. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
This patch works with the following three flags from two headers (nand.h and bbm.h): (1) NAND_USE_FLASH_BBT (nand.h) (2) NAND_USE_FLASH_BBT_NO_OOB (nand.h) (3) NAND_BBT_NO_OOB (bbm.h) These flags are all related and interdependent, yet they were in different headers. Flag (2) is simply the combination of (1) and (3) and can be eliminated. This patch accomplishes the following: * eliminate NAND_USE_FLASH_BBT_NO_OOB (i.e., flag (2)) * move NAND_USE_FLASH_BBT (i.e., flag (1)) to bbm.h It's important to note that because (1) and (3) are now both found in bbm.h, they should NOT be used in the "nand_chip.options" field. I removed a small section from the mtdnand DocBook because it referes to NAND_USE_FLASH_BBT in nand.h, which has been moved to bbm.h. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
This patch handles the problems we've been having with using conflicting flags from nand.h and bbm.h in the same nand_chip.options field. We should try to separate these two spaces a little more clearly, and so I have added a bbt_options field to nand_chip. Important notes about nand_chip fields: * bbt_options field should contain ONLY flags from bbm.h. They should be able to pass safely to a nand_bbt_descr data structure. - BBT option flags start with the "NAND_BBT_" prefix. * options field should contian ONLY flags from nand.h. Ideally, they should not be involved in any BBT related options. - NAND chip option flags start with the "NAND_" prefix. * Every flag should have a nice comment explaining what the flag is. While this is not yet the case on all existing flags, please be sure to write one for new flags. Even better, you can help document the code better yourself! Please try to follow these conventions to make everyone's lives easier. Among the flags that are being moved to the new bbt_options field throughout various drivers, etc. are: * NAND_BBT_SCANLASTPAGE * NAND_BBT_SCAN2NDPAGE and there will be more to come. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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由 Brian Norris 提交于
This patch reverts most of: commit 58373ff0 mtd: nand: more BB Detection refactoring and dynamic scan options According to the discussion at: http://lists.infradead.org/pipermail/linux-mtd/2011-May/035696.html the NAND_BBT_SCANBYTE1AND6 flag, although technically valid, can break some existing ECC layouts that use the 6th byte in the OOB for ECC data. Furthermore, we apparently do not need to scan both bytes 1 and 6 in the OOB region of the devices under consideration; instead, we only need to scan one or the other. Thus, the NAND_BBT_SCANBYTE1AND6 flag is at best unnecessary and at worst a regression. Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
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- 25 5月, 2011 1 次提交
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由 Brian Norris 提交于
It is nicer to dynamically create our badblock patterns than to statically define them. The nand_create_default_bbt_descr() function does a sufficient job of handling various bad block scanning options for either flash-based or non-flash-based BBTs, so we might as well use the function for both cases. This patch simplifies and shortens our code (and removes a TODO that I left a few months ago). Signed-off-by: NBrian Norris <computersforpeace@gmail.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 31 3月, 2011 1 次提交
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由 Lucas De Marchi 提交于
Fixes generated by 'codespell' and manually reviewed. Signed-off-by: NLucas De Marchi <lucas.demarchi@profusion.mobi>
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- 11 3月, 2011 1 次提交
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由 Stanislav Fomichev 提交于
In 'verify_bbt_descr()', first check the "bd" pointer, then dereference it. Comments amended by Artem. Signed-off-by: NStanislav Fomichev <kernel@fomichev.me> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 04 12月, 2010 1 次提交
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由 Randy Dunlap 提交于
Warning(include/linux/mtd/nand.h:543): No description found for parameter 'badblockbits' Warning(drivers/mtd/nand/nand_bbt.c:1101): No description found for parameter 'mtd' Signed-off-by: NRandy Dunlap <randy.dunlap@oracle.com> Cc: David Woodhouse <dwmw2@infradead.org> Cc: linux-mtd@lists.infradead.org Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 25 10月, 2010 4 次提交
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it will create an empty BBT table without considering vendor's BBT information. Vendor's information may be unavailable if the NAND controller has a different DATA & OOB layout or this information may be allready purged. Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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The first (sixt) byte in the OOB area contains vendor's bad block information. During identification of the NAND chip this information is collected by scanning the complete chip. The option NAND_USE_FLASH_BBT is used to store this information in a sector so we don't have to scan the complete flash. Unfortunately the code stores a marker in order to recognize the BBT in the OOB area. This will fail if the OOB area is completely used for ECC. This patch introduces the option NAND_USE_FLASH_BBT_NO_OOB which has to be used with NAND_USE_FLASH_BBT. It will then store BBT on flash without touching the OOB area. The BBT format on flash remains same except the first page starts with the recognition pattern followed by the version byte. This change was tested in nandsim and it looks good so far :) Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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No code change. Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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Signed-off-by: NSebastian Andrzej Siewior <bigeasy@linutronix.de> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 09 8月, 2010 1 次提交
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由 David Woodhouse 提交于
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 02 8月, 2010 3 次提交
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由 Brian Norris 提交于
This is a revision to PATCH 2/2 that I sent. Link: http://lists.infradead.org/pipermail/linux-mtd/2010-July/030911.html Added new flag for scanning of both bytes 1 and 6 of the OOB for a BB marker (instead of simply one or the other). The "check_pattern" and "check_short_pattern" functions were updated to include support for scanning the two different locations in the OOB. In order to handle increases in variety of necessary scanning patterns, I implemented dynamic memory allocation of nand_bbt_descr structs in new function 'nand_create_default_bbt_descr()'. This replaces some increasingly-unwieldy, statically-declared descriptors. It can replace several more (e.g. "flashbased" structs). However, I do not test the flashbased options personally. How this was tested: I referenced 30+ data sheets (covering 100+ parts), and I tested a selection of 10 different chips to varying degrees. Particularly, I tested the creation of bad-block descriptors and basic BB scanning on three parts: ST NAND04GW3B2D, 2K page ST NAND128W3A, 512B page Samsung K9F1G08U0A, 2K page To test these, I wrote some fake bad block markers to the flash (in OOB bytes 1, 6, and elsewhere) to see if the scanning routine would detect them properly. However, this method was somewhat limited because the driver I am using has some bugs in its OOB write functionality. Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
Some level of support for various scanning locations was already built in, but this required clean-up. First, BB marker location cannot be determined _only_ by the page size. Instead, I implemented some heuristic detection based on data sheets from various manufacturers (all found in nand_base.c:nand_get_flash_type()). Second, once these options were identified, they were not handled properly by nand_bbt.c:nand_default_bbt(). I updated the static nand_bbt_desc structs to reflect the need for more combinations of detection. The memory allocation here probably needs to be done dynamically in the very near future (see next patches). Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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由 Brian Norris 提交于
NAND_BB_LAST_PAGE used to be in nand.h, but it pertained to bad block management and so belongs next to NAND_BBT_SCAN2NDPAGE in bbm.h. Also, its previous flag value (0x00000400) conflicted with NAND_BBT_SCANALLPAGES so I changed its value to 0x00008000. All uses of the name were modified to provide consistency with other "NAND_BBT_*" flags. Signed-off-by: NBrian Norris <norris@broadcom.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 14 5月, 2010 1 次提交
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由 Kevin Cernekee 提交于
This is a slightly modified version of a patch submitted last year by Reuben Dowle <reuben.dowle@navico.com>. His original comments follow: This patch adds support for some MLC NAND flashes that place the BB marker in the LAST page of the bad block rather than the FIRST page used for SLC NAND and other types of MLC nand. Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND): " Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. ... " As far as I can tell, this is the same for all Samsung MLC nand, and in fact the samsung bsp for the processor used in our project (s3c6410) actually contained a hack similar to this patch but less portable to enable use of their NAND parts. I discovered this problem when trying to use a Micron NAND which does not used this layout - I wish samsung would put their stuff in main-line to avoid this type of problem. Currently this patch causes all MLC nand with manufacturer codes from Samsung and ST(Numonyx) to use this alternative location, since these are the manufactures that I know of that use this layout. Signed-off-by: NKevin Cernekee <cernekee@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 27 2月, 2010 1 次提交
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由 Maxim Levitsky 提交于
This changes the behavier of MTD_OOB_RAW. It used to read both OOB and data to the data buffer, however you would still need to specify the dummy oob buffer. This is only used in one place, but makes it hard to read data+oob without ECC test, thus I removed that behavier, and fixed the user. Now MTD_OOB_RAW behaves just like MTD_OOB_PLACE, but doesn't do ECC validation Signed-off-by: NMaxim Levitsky <maximlevitsky@gmail.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 10 12月, 2008 1 次提交
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由 Adrian Hunter 提交于
MTD internal API presently uses 32-bit values to represent device size. This patch updates them to 64-bits but leaves the external API unchanged. Extending the external API is a separate issue for several reasons. First, no one needs it at the moment. Secondly, whether the implementation is done with IOCTLs, sysfs or both is still debated. Thirdly external API changes require the internal API to be accepted first. Note that although the MTD API will be able to support 64-bit device sizes, existing drivers do not and are not required to do so, although NAND base has been updated. In general, changing from 32-bit to 64-bit values cause little or no changes to the majority of the code with the following exceptions: - printk message formats - division and modulus of 64-bit values - NAND base support - 32-bit local variables used by mtdpart and mtdconcat - naughtily assuming one structure maps to another in MEMERASE ioctl Signed-off-by: NAdrian Hunter <ext-adrian.hunter@nokia.com> Signed-off-by: NArtem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
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- 05 6月, 2008 1 次提交
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由 Adrian Bunk 提交于
Once upon a time, the MTD repository was using CVS. This patch therefore removes all usages of the no longer updated CVS keywords from the MTD code. This also includes code that printed them to the user. Signed-off-by: NAdrian Bunk <bunk@kernel.org> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 29 11月, 2006 2 次提交
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由 Burman Yan 提交于
Signed-off-by: NYan Burman <yan_952@hotmail.com> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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由 Vitaly Wool 提交于
As was discussed between Ricard Wanderlöf, David Woodhouse, Artem Bityutskiy and me, the current API for reading/writing OOB is confusing. The thing that introduces confusion is the need to specify ops.len together with ops.ooblen for reads/writes that concern only OOB not data area. So, ops.len is overloaded: when ops.datbuf != NULL it serves to specify the length of the data read, and when ops.datbuf == NULL, it serves to specify the full OOB read length. The patch inlined below is the slightly updated version of the previous patch serving the same purpose, but with the new Artem's comments taken into account. Artem, BTW, thanks a lot for your valuable input! Signed-off-by: NVitaly Wool <vwool@ru.mvista.com> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 26 9月, 2006 1 次提交
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由 David Woodhouse 提交于
In particular, the board driver might need it to be DMAable. Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 30 5月, 2006 1 次提交
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由 Thomas Gleixner 提交于
The raw read/write access to NAND (without ECC) has been changed in the NAND rework. Expose the new way - setting the file mode via ioctl - to userspace. Also allow to read out the ecc statistics information so userspace tools can see that bitflips happened and whether errors where correctable or not. Also expose the number of bad blocks for the partition, so nandwrite can check if the data fits into the parition before writing to it. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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- 29 5月, 2006 1 次提交
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由 Thomas Gleixner 提交于
Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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- 27 5月, 2006 1 次提交
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由 Thomas Gleixner 提交于
Modularize the write function and reorganaize the internal buffer management. Remove obsolete chip options and fixup all affected users. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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- 23 5月, 2006 2 次提交
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由 Thomas Gleixner 提交于
MTD clients are agnostic of FLASH which needs ECC suppport. Remove the functions and fixup the callers. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Joern Engel 提交于
At least two flashes exists that have the concept of a minimum write unit, similar to NAND pages, but no other NAND characteristics. Therefore, rename the minimum write unit to "writesize" for all flashes, including NAND. Signed-off-by: NJoern Engel <joern@wh.fh-wedel.de>
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- 14 5月, 2006 1 次提交
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由 David Woodhouse 提交于
It was just too painful to deal with. Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 13 5月, 2006 2 次提交
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由 David Woodhouse 提交于
We were scanning for 0xFF through the entire chip -- which takes a while when it's a 512MiB device as I have on my current toy. The specs only say we need to check certain bytes -- so do only that. Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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由 David Woodhouse 提交于
These new chips have 128KiB blocks. Don't try to kmalloc that. Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 07 11月, 2005 1 次提交
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由 Thomas Gleixner 提交于
Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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- 16 7月, 2005 1 次提交
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由 Thomas Gleixner 提交于
The previous change to read a single byte from oob breaks the bad block scan on 16 bit devices, when the byte is on an odd address. Read the complete oob for now. Remove the unused arguments from check_short_pattern() Move the wait for ready function so it is only executed when consecutive reads happen. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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- 29 6月, 2005 1 次提交
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由 Thomas Gleixner 提交于
Make the bad block table search functional again Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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