1. 02 6月, 2016 4 次提交
  2. 11 5月, 2016 1 次提交
  3. 08 3月, 2016 8 次提交
  4. 05 3月, 2016 1 次提交
  5. 13 2月, 2016 2 次提交
    • C
      mtd: spi-nor: remove micron_quad_enable() · 3b5394a3
      Cyrille Pitchen 提交于
      This patch remove the micron_quad_enable() function which force the Quad
      SPI mode. However, once this mode is enabled, the Micron memory expect ALL
      commands to use the SPI 4-4-4 protocol. Hence a failure does occur when
      calling spi_nor_wait_till_ready() right after the update of the Enhanced
      Volatile Configuration Register (EVCR) in the micron_quad_enable() as
      the SPI controller driver is not aware about the protocol change.
      
      Since there is almost no performance increase using Fast Read 4-4-4
      commands instead of Fast Read 1-1-4 commands, we rather keep on using the
      Extended SPI mode than enabling the Quad SPI mode.
      
      Let's take the example of the pretty standard use of 8 dummy cycles during
      Fast Read operations on 64KB erase sectors:
      
      Fast Read 1-1-4 requires 8 cycles for the command, then 24 cycles for the
      3byte address followed by 8 dummy clock cycles and finally 65536*2 cycles
      for the read data; so 131112 clock cycles.
      
      On the other hand the Fast Read 4-4-4 would require 2 cycles for the
      command, then 6 cycles for the 3byte address followed by 8 dummy clock
      cycles and finally 65536*2 cycles for the read data. So 131088 clock
      cycles. The theorical bandwidth increase is 0.0%.
      
      Now using Fast Read operations on 512byte pages:
      Fast Read 1-1-4 needs 8+24+8+(512*2) = 1064 clock cycles whereas Fast
      Read 4-4-4 would requires 2+6+8+(512*2) = 1040 clock cycles. Hence the
      theorical bandwidth increase is 2.3%.
      Consecutive reads for non sequential pages is not a relevant use case so
      The Quad SPI mode is not worth it.
      
      mtd_speedtest seems to confirm these figures.
      Signed-off-by: NCyrille Pitchen <cyrille.pitchen@atmel.com>
      Fixes: 548cd3ab ("mtd: spi-nor: Add quad I/O support for Micron SPI NOR")
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      3b5394a3
    • S
      mtd: spi-nor: Add support for s25fl116k · c0826679
      Sascha Hauer 提交于
      The Spansion s25fl116k is a 16MBit NOR Flash supporting dual and
      quad read operations.
      Signed-off-by: NSascha Hauer <s.hauer@pengutronix.de>
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      c0826679
  6. 07 1月, 2016 1 次提交
  7. 06 1月, 2016 2 次提交
  8. 10 12月, 2015 1 次提交
  9. 05 12月, 2015 1 次提交
  10. 02 12月, 2015 1 次提交
  11. 20 11月, 2015 2 次提交
  12. 17 11月, 2015 1 次提交
  13. 12 11月, 2015 3 次提交
  14. 20 10月, 2015 1 次提交
  15. 14 10月, 2015 7 次提交
  16. 13 10月, 2015 1 次提交
  17. 30 9月, 2015 3 次提交
    • B
      mtd: spi-nor: add support for w25q128fw · 4404bd74
      Brian Norris 提交于
      Tested only with single I/O, but the datasheet says it supports dual and
      quad.
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      4404bd74
    • F
      mtd: spi-nor: scale up timeout for full-chip erase · 09b6a377
      Furquan Shaikh 提交于
      This patch fixes timeout issues seen on large NOR flash (e.g., 16MB
      w25q128fw) when using ioctl(MEMERASE) with offset=0 and length=16M. The
      input parameters matter because spi_nor_erase() uses a different code
      path for full-chip erase, where we use the SPINOR_OP_CHIP_ERASE (0xc7)
      opcode.
      
      Fix: use a different timeout for full-chip erase than for other
      commands.
      
      While most operations can be expected to perform relatively similarly
      across a variety of NOR flash types and sizes (and therefore might as
      well use a similar timeout to keep things simple), full-chip erase is
      unique, because the time it typically takes to complete:
      (1) is much larger than most operations and
      (2) scales with the size of the flash.
      
      Let's base our timeout on the original comments stuck here -- that a 2MB
      flash requires max 40s to erase.
      
      Small survey of a few flash datasheets I have lying around:
      
        Chip         Size (MB)   Max chip erase (seconds)
        ----         --------    ------------------------
        w25q32fw     4           50
        w25q64cv     8           30
        w25q64fw     8           100
        w25q128fw    16          200
        s25fl128s    16          ~256
        s25fl256s    32          ~512
      
      From this data, it seems plenty sufficient to say we need to wait for
      40 seconds for each 2MB of flash.
      
      After this change, it might make some sense to decrease the timeout for
      everything else, as even the most extreme operations (single block
      erase?) shouldn't take more than a handful of seconds. But for safety,
      let's leave it as-is. It's only an error case, after all, so we don't
      exactly need to optimize it.
      Signed-off-by: NFurquan Shaikh <furquan@google.com>
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      09b6a377
    • Y
      mtd: spi-nor: Add support for sst25wf040b · c887be71
      Yao Yuan 提交于
      It is a 512KiB flash with 4 KiB erase sectors.
      Signed-off-by: NYuan Yao <yao.yuan@freescale.com>
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      c887be71