- 10 1月, 2007 2 次提交
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由 Adrian Hunter 提交于
Read-while-load enables higher performance read operations. Signed-off-by: NAdrian Hunter <ext-adrian.hunter@nokia.com> Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
OneNAND supports up to 4 writes at one NAND page. Add support of this feature. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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- 16 11月, 2006 2 次提交
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由 Kyungmin Park 提交于
Now you can use mtd lock inferface on OneNAND The idea is from Nemakal, Vijaya, thanks Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
We can use the two methods to wait. 1. polling: read interrupt status register 2. interrupt: use kernel ineterrupt mechanism To use interrupt method, you first connect onenand interrupt pin to your platform and configure interrupt properly Signed-off-by: Kyungmin Park <kyungmin.park at samsung.com>
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- 26 9月, 2006 1 次提交
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由 Kyungmin Park 提交于
OneNAND lock scheme depends on density and process of chip. Some OneNAND chips support all block unlock Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 29 6月, 2006 1 次提交
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由 Randy Dunlap 提交于
Fix some kernel-doc typos/spellos. Use kernel-doc syntax in places where it was almost used. Correct/add struct, struct field, and function param names where needed. Signed-off-by: NRandy Dunlap <rdunlap@xenotime.net> Signed-off-by: NDavid Woodhouse <dwmw2@infradead.org>
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- 29 5月, 2006 1 次提交
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由 Thomas Gleixner 提交于
The nand_oobinfo structure is not fitting the newer error correction demands anymore. Replace it by struct nand_ecclayout and fixup the users all over the place. Keep the nand_oobinfo based ioctl for user space compability reasons. Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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- 12 5月, 2006 2 次提交
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由 Kyungmin Park 提交于
One Block of the NAND Flash Array memory is reserved as a One-Time Programmable Block memory area. Also, 1st Block of NAND Flash Array can be used as OTP. The OTP block can be read, programmed and locked using the same operations as any other NAND Flash Array memory block. OTP block cannot be erased. OTP block is fully-guaranteed to be a valid block. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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由 Kyungmin Park 提交于
Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com>
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- 19 12月, 2005 2 次提交
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由 Kyungmin Park 提交于
Signed-off-by: NLinus Torvalds <torvalds@osdl.org>
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由 Kyungmin Park 提交于
This (and the three subsequent patches) is working well on OMAP H4 with 2.6.15-rc4 kernel and passes the LTP fs test. Signed-off-by: NLinus Torvalds <torvalds@osdl.org>
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- 07 11月, 2005 8 次提交
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由 Thomas Gleixner 提交于
Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
Add density mask for better support of DDP chips. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
Add suspend/resume Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
- Remove unused block, page parameters - Add constant instead of runtime value Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
- Update OMAP OneNAND mapping file using device driver model - Remove board specific macro and values. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
Based on NAND memory bad block table code Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
Add OneNAND Sync. Burst Read support Tested with OMAP platform Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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由 Kyungmin Park 提交于
OneNAND is a new flash technology from Samsung with integrated SRAM buffers and logic interface. Signed-off-by: NKyungmin Park <kyungmin.park@samsung.com> Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
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