1. 26 11月, 2014 1 次提交
  2. 20 11月, 2014 1 次提交
  3. 23 9月, 2014 1 次提交
  4. 20 8月, 2014 2 次提交
  5. 22 7月, 2014 2 次提交
  6. 09 7月, 2014 1 次提交
  7. 21 5月, 2014 1 次提交
  8. 10 5月, 2014 1 次提交
    • B
      mtd: nand: refactor erase_cmd() to return chip status · 49c50b97
      Brian Norris 提交于
      The nand_chip::erase_cmd callback previously served a dual purpose; for
      one, it allowed a per-flash-chip override, so that AG-AND devices could
      use a different erase command than other NAND. These AND devices were
      dropped in commit 14c65786 (mtd: nand:
      remove AG-AND support). On the other hand, some drivers (denali and
      doc-g4) need to use this sort of callback to implement
      controller-specific erase operations.
      
      To make the latter operation easier for some drivers (e.g., ST's new BCH
      NAND driver), it helps if the command dispatch and wait functions can be
      lumped together, rather than called separately.
      
      This patch does two things:
       1. Pull the call to chip->waitfunc() into chip->erase_cmd(), and return
          the status from this callback
       2. Rename erase_cmd() to just erase(), since this callback does a
          little more than just send a command
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      Tested-by: NLee Jones <lee.jones@linaro.org>
      49c50b97
  9. 26 3月, 2014 1 次提交
  10. 11 3月, 2014 8 次提交
  11. 21 1月, 2014 2 次提交
  12. 15 1月, 2014 1 次提交
  13. 14 1月, 2014 4 次提交
    • B
      mtd: nand: use __packed shorthand · e2e6b7b7
      Brian Norris 提交于
      To be consistent with the rest of include/linux/mtd/nand.h, we should
      use the __packed shorthand instead of __attribute__((packed)).
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      Acked-by: NHuang Shijie <b32955@freescale.com>
      e2e6b7b7
    • B
      mtd: nand: support Micron READ RETRY · 8429bb39
      Brian Norris 提交于
      Micron provides READ RETRY support via the ONFI vendor-specific
      parameter block (to indicate how many read-retry modes are available)
      and the ONFI {GET,SET}_FEATURES commands with a vendor-specific feature
      address (to support reading/switching the current read-retry mode).
      
      The recommended sequence is as follows:
      
        1. Perform PAGE_READ operation
        2. If no ECC error, we are done
        3. Run SET_FEATURES with feature address 89h, mode 1
        4. Retry PAGE_READ operation
        5. If ECC error and there are remaining supported modes, increment the
           mode and return to step 3. Otherwise, this is a true ECC error.
        6. Run SET_FEATURES with feature address 89h, mode 0, to return to the
           default state.
      
      This patch implements the chip->setup_read_retry() callback for
      Micron and fills in the chip->read_retries.
      
      Tested on Micron MT29F32G08CBADA, which supports 8 read-retry modes.
      
      The Micron vendor-specific table was checked against the datasheets for
      the following Micron NAND:
      
      Needs retry   Cell-type    Part number          Vendor revision    Byte 180
      -----------   ---------    ----------------     ---------------    ------------
      No            SLC          MT29F16G08ABABA      1                  Reserved (0)
      No            MLC          MT29F32G08CBABA      1                  Reserved (0)
      No            SLC          MT29F1G08AACWP       1                  0
      Yes           MLC          MT29F32G08CBADA      1                  08h
      Yes           MLC          MT29F64G08CBABA      2                  08h
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      Acked-by: NHuang Shijie <b32955@freescale.com>
      8429bb39
    • B
      mtd: nand: add generic READ RETRY support · ba84fb59
      Brian Norris 提交于
      Modern MLC (and even SLC?) NAND can experience a large number of
      bitflips (beyond the recommended correctability capacity) due to drifts
      in the voltage threshold (Vt). These bitflips can cause ECC errors to
      occur well within the expected lifetime of the flash. To account for
      this, some manufacturers provide a mechanism for shifting the Vt
      threshold after a corrupted read.
      
      The generic pattern seems to be that a particular flash has N read retry
      modes (where N = 0, traditionally), and after an ECC failure, the host
      should reconfigure the flash to use the next available mode, then retry
      the read operation. This process repeats until all bitfips can be
      corrected or until the host has tried all available retry modes.
      
      This patch adds the infrastructure support for a
      vendor-specific/flash-specific callback, used for setting the read-retry
      mode (i.e., voltage threshold).
      
      For now, this patch always returns the flash to mode 0 (the default
      mode) after a successful read-retry, according to the flowchart found in
      Micron's datasheets. This may need to change in the future if it is
      determined that eventually, mode 0 is insufficient for the majority of
      the flash cells (and so for performance reasons, we should leave the
      flash in mode 1, 2, etc.).
      Signed-off-by: NBrian Norris <computersforpeace@gmail.com>
      Acked-by: NHuang Shijie <b32955@freescale.com>
      ba84fb59
    • B
      6f0065b0
  14. 04 1月, 2014 1 次提交
  15. 28 10月, 2013 3 次提交
  16. 31 8月, 2013 4 次提交
  17. 30 8月, 2013 1 次提交
  18. 06 8月, 2013 3 次提交
  19. 05 4月, 2013 2 次提交