Skip to content

cloud-kernel
cloud-kernel

openanolis / cloud-kernel
1 年多 前同步成功

通知 160
Star 36
Fork 7
cloud-kernel
cloud-kernel
提交 7a30601b 编写于 作者: T Thomas Gleixner 提交者： David Woodhouse
浏览文件
操作

[MTD] NAND Introduce NAND_NO_READRDY option 

The nand driver has a superflous read ready / command
delay in the read functions. This was added to handle
chips which have an automatic read forward. Newer
chips do not have this functionality anymore. Add this
option to avoid the delay / I/O operation. Mark all
large page chips with the new option flag.
Signed-off-by: NThomas Gleixner <tglx@linutronix.de>
上级 04bbd0ea
隐藏空白更改
内联 并排
Showing with 92 addition and 77 deletion
drivers/mtd/nand/nand_ids.c
浏览文件 @ 7a30601b
......@@ -18,99 +18,110 @@
* Name. ID code, pagesize, chipsize in MegaByte, eraseblock size,
* options
*
* Pagesize; 0, 256, 512
* 0 get this information from the extended chip ID
* Pagesize; 0, 256, 512
* 0 get this information from the extended chip ID
+ 256 256 Byte page size
* 512 512 Byte page size
*/
struct nand_flash_dev nand_flash_ids[] = {
{"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0},
{"NAND 2MiB 5V 8-bit", 0x64, 256, 2, 0x1000, 0},
{"NAND 4MiB 5V 8-bit", 0x6b, 512, 4, 0x2000, 0},
{"NAND 1MiB 3,3V 8-bit", 0xe8, 256, 1, 0x1000, 0},
{"NAND 1MiB 3,3V 8-bit", 0xec, 256, 1, 0x1000, 0},
{"NAND 2MiB 3,3V 8-bit", 0xea, 256, 2, 0x1000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xd5, 512, 4, 0x2000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0},
{"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0},
{"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16},
{"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16},
{"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0},
{"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0},
{"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16},
{"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0},
{"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0},
{"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0},
{"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0},
{"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 8-bit", 0x39, 512, 128, 0x4000, 0},
{"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 1,8V 16-bit", 0x49, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x59, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0},
/* These are the new chips with large page size. The pagesize
* and the erasesize is determined from the extended id bytes
*/
{"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0},
{"NAND 2MiB 5V 8-bit", 0x64, 256, 2, 0x1000, 0},
{"NAND 4MiB 5V 8-bit", 0x6b, 512, 4, 0x2000, 0},
{"NAND 1MiB 3,3V 8-bit", 0xe8, 256, 1, 0x1000, 0},
{"NAND 1MiB 3,3V 8-bit", 0xec, 256, 1, 0x1000, 0},
{"NAND 2MiB 3,3V 8-bit", 0xea, 256, 2, 0x1000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xd5, 512, 4, 0x2000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0},
{"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0},
{"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16},
{"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16},
{"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0},
{"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0},
{"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16},
{"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0},
{"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0},
{"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0},
{"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0},
{"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 8-bit", 0x39, 512, 128, 0x4000, 0},
{"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 1,8V 16-bit", 0x49, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x59, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0},
/*
* These are the new chips with large page size. The pagesize and the
* erasesize is determined from the extended id bytes
*/
#define LP_OPTIONS (NAND_SAMSUNG_LP_OPTIONS | NAND_NO_READRDY | NAND_NO_AUTOINCR)
#define LP_OPTIONS16 (LP_OPTIONS | NAND_BUSWIDTH_16)
/*512 Megabit */
{"NAND 64MiB 1,8V 8-bit", 0xA2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 64MiB 3,3V 8-bit", 0xF2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 64MiB 1,8V 16-bit", 0xB2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 64MiB 3,3V 16-bit", 0xC2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 64MiB 1,8V 8-bit", 0xA2, 0, 64, 0, LP_OPTIONS},
{"NAND 64MiB 3,3V 8-bit", 0xF2, 0, 64, 0, LP_OPTIONS},
{"NAND 64MiB 1,8V 16-bit", 0xB2, 0, 64, 0, LP_OPTIONS16},
{"NAND 64MiB 3,3V 16-bit", 0xC2, 0, 64, 0, LP_OPTIONS16},
/* 1 Gigabit */
{"NAND 128MiB 1,8V 8-bit", 0xA1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 128MiB 3,3V 8-bit", 0xF1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 128MiB 1,8V 16-bit", 0xB1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 128MiB 1,8V 8-bit", 0xA1, 0, 128, 0, LP_OPTIONS},
{"NAND 128MiB 3,3V 8-bit", 0xF1, 0, 128, 0, LP_OPTIONS},
{"NAND 128MiB 1,8V 16-bit", 0xB1, 0, 128, 0, LP_OPTIONS16},
{"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, LP_OPTIONS16},
/* 2 Gigabit */
{"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, LP_OPTIONS},
{"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, LP_OPTIONS},
{"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, LP_OPTIONS16},
{"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, LP_OPTIONS16},
/* 4 Gigabit */
{"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, LP_OPTIONS},
{"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, LP_OPTIONS},
{"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, LP_OPTIONS16},
{"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, LP_OPTIONS16},
/* 8 Gigabit */
{"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 1GiB 1,8V 16-bit", 0xB3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 1GiB 3,3V 16-bit", 0xC3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, LP_OPTIONS},
{"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, LP_OPTIONS},
{"NAND 1GiB 1,8V 16-bit", 0xB3, 0, 1024, 0, LP_OPTIONS16},
{"NAND 1GiB 3,3V 16-bit", 0xC3, 0, 1024, 0, LP_OPTIONS16},
/* 16 Gigabit */
{"NAND 2GiB 1,8V 8-bit", 0xA5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 2GiB 3,3V 8-bit", 0xD5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
/* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout !
* The chosen minimum erasesize is 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page planes
* 1 block = 2 pages, but due to plane arrangement the blocks 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7
* Anyway JFFS2 would increase the eraseblock size so we chose a combined one which can be erased in one go
* There are more speed improvements for reads and writes possible, but not implemented now
{"NAND 2GiB 1,8V 8-bit", 0xA5, 0, 2048, 0, LP_OPTIONS},
{"NAND 2GiB 3,3V 8-bit", 0xD5, 0, 2048, 0, LP_OPTIONS},
{"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, LP_OPTIONS16},
{"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, LP_OPTIONS16},
/*
* Renesas AND 1 Gigabit. Those chips do not support extended id and
* have a strange page/block layout ! The chosen minimum erasesize is
* 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page
* planes 1 block = 2 pages, but due to plane arrangement the blocks
* 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7 Anyway JFFS2 would
* increase the eraseblock size so we chose a combined one which can be
* erased in one go There are more speed improvements for reads and
* writes possible, but not implemented now
*/
{"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000, NAND_IS_AND | NAND_NO_AUTOINCR | NAND_4PAGE_ARRAY | BBT_AUTO_REFRESH},
{"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000,
NAND_IS_AND | NAND_NO_AUTOINCR |NAND_NO_READRDY | NAND_4PAGE_ARRAY |
BBT_AUTO_REFRESH
},
{NULL,}
};
......
include/linux/mtd/nand.h
浏览文件 @ 7a30601b
......@@ -159,6 +159,10 @@ typedef enum {
* bits from adjacent blocks from 'leaking' in altering data.
* This happens with the Renesas AG-AND chips, possibly others. */
#define BBT_AUTO_REFRESH 0x00000080
/* Chip does not require ready check on read. True
* for all large page devices, as they do not support
* autoincrement.*/
#define NAND_NO_READRDY 0x00000100
/* Options valid for Samsung large page devices */
#define NAND_SAMSUNG_LP_OPTIONS \
......
Markdown is supported
0% 或 .
You are about to add 0 people to the discussion. Proceed with caution.
先完成此消息的编辑！
想要评论请 注册 或