mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES

Recently imlemented writing support has shown that current num of
retries is too low. Writing requires longer waiting than simple reading.
Signed-off-by: NRafał Miłecki <zajec5@gmail.com>
Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>

drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c

@@ -17,8 +17,8 @@
 #include "bcm47xxnflash.h"
 
 /* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has
- * shown 164 retries as maxiumum. */
-#define NFLASH_READY_RETRIES		1000
+ * shown ~1000 retries as maxiumum. */
+#define NFLASH_READY_RETRIES		10000
 
 #define NFLASH_SECTOR_SIZE		512