提交 26cdb67c 编写于 作者: D David Woodhouse

[MTD] Remove more strange u_intxx_t types

Signed-off-by: NDavid Woodhouse <David.Woodhouse@intel.com>
上级 3854be77
......@@ -696,7 +696,7 @@ struct mtd_info *mtd_concat_create(struct mtd_info *subdev[], /* subdevices to c
int i;
size_t size;
struct mtd_concat *concat;
u_int32_t max_erasesize, curr_erasesize;
uint32_t max_erasesize, curr_erasesize;
int num_erase_region;
printk(KERN_NOTICE "Concatenating MTD devices:\n");
......
......@@ -39,8 +39,8 @@ struct erase_info {
uint64_t fail_addr;
u_long time;
u_long retries;
u_int dev;
u_int cell;
unsigned dev;
unsigned cell;
void (*callback) (struct erase_info *self);
u_long priv;
u_char state;
......@@ -49,8 +49,8 @@ struct erase_info {
struct mtd_erase_region_info {
uint64_t offset; /* At which this region starts, from the beginning of the MTD */
u_int32_t erasesize; /* For this region */
u_int32_t numblocks; /* Number of blocks of erasesize in this region */
uint32_t erasesize; /* For this region */
uint32_t numblocks; /* Number of blocks of erasesize in this region */
unsigned long *lockmap; /* If keeping bitmap of locks */
};
......@@ -102,14 +102,14 @@ struct mtd_oob_ops {
struct mtd_info {
u_char type;
u_int32_t flags;
uint32_t flags;
uint64_t size; // Total size of the MTD
/* "Major" erase size for the device. Naïve users may take this
* to be the only erase size available, or may use the more detailed
* information below if they desire
*/
u_int32_t erasesize;
uint32_t erasesize;
/* Minimal writable flash unit size. In case of NOR flash it is 1 (even
* though individual bits can be cleared), in case of NAND flash it is
* one NAND page (or half, or one-fourths of it), in case of ECC-ed NOR
......@@ -117,10 +117,10 @@ struct mtd_info {
* Any driver registering a struct mtd_info must ensure a writesize of
* 1 or larger.
*/
u_int32_t writesize;
uint32_t writesize;
u_int32_t oobsize; // Amount of OOB data per block (e.g. 16)
u_int32_t oobavail; // Available OOB bytes per block
uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
uint32_t oobavail; // Available OOB bytes per block
/*
* If erasesize is a power of 2 then the shift is stored in
......@@ -233,7 +233,7 @@ struct mtd_info {
void (*put_device) (struct mtd_info *mtd);
};
static inline u_int32_t mtd_div_by_eb(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_div_by_eb(uint64_t sz, struct mtd_info *mtd)
{
if (mtd->erasesize_shift)
return sz >> mtd->erasesize_shift;
......@@ -241,14 +241,14 @@ static inline u_int32_t mtd_div_by_eb(uint64_t sz, struct mtd_info *mtd)
return sz;
}
static inline u_int32_t mtd_mod_by_eb(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_mod_by_eb(uint64_t sz, struct mtd_info *mtd)
{
if (mtd->erasesize_shift)
return sz & mtd->erasesize_mask;
return do_div(sz, mtd->erasesize);
}
static inline u_int32_t mtd_div_by_ws(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_div_by_ws(uint64_t sz, struct mtd_info *mtd)
{
if (mtd->writesize_shift)
return sz >> mtd->writesize_shift;
......@@ -256,7 +256,7 @@ static inline u_int32_t mtd_div_by_ws(uint64_t sz, struct mtd_info *mtd)
return sz;
}
static inline u_int32_t mtd_mod_by_ws(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_mod_by_ws(uint64_t sz, struct mtd_info *mtd)
{
if (mtd->writesize_shift)
return sz & mtd->writesize_mask;
......
......@@ -38,7 +38,7 @@ struct mtd_partition {
char *name; /* identifier string */
uint64_t size; /* partition size */
uint64_t offset; /* offset within the master MTD space */
u_int32_t mask_flags; /* master MTD flags to mask out for this partition */
uint32_t mask_flags; /* master MTD flags to mask out for this partition */
struct nand_ecclayout *ecclayout; /* out of band layout for this partition (NAND only)*/
struct mtd_info **mtdp; /* pointer to store the MTD object */
};
......
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